JPS5211778A - Semiconductor controlled rectifier - Google Patents
Semiconductor controlled rectifierInfo
- Publication number
- JPS5211778A JPS5211778A JP8729775A JP8729775A JPS5211778A JP S5211778 A JPS5211778 A JP S5211778A JP 8729775 A JP8729775 A JP 8729775A JP 8729775 A JP8729775 A JP 8729775A JP S5211778 A JPS5211778 A JP S5211778A
- Authority
- JP
- Japan
- Prior art keywords
- controlled rectifier
- semiconductor controlled
- semiconductor
- thyristor
- periphery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To improve the performance of the thyristor by providing an auxiliary electrode of new shape and by forming a short emitter on the periphery of the cathode area.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8729775A JPS5211778A (en) | 1975-07-18 | 1975-07-18 | Semiconductor controlled rectifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP8729775A JPS5211778A (en) | 1975-07-18 | 1975-07-18 | Semiconductor controlled rectifier |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5211778A true JPS5211778A (en) | 1977-01-28 |
JPS5631900B2 JPS5631900B2 (en) | 1981-07-24 |
Family
ID=13910873
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8729775A Granted JPS5211778A (en) | 1975-07-18 | 1975-07-18 | Semiconductor controlled rectifier |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5211778A (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011151063A (en) * | 2010-01-19 | 2011-08-04 | Sansha Electric Mfg Co Ltd | Thyristor |
JP5777761B2 (en) * | 2014-03-19 | 2015-09-09 | 株式会社三社電機製作所 | Thyristor |
-
1975
- 1975-07-18 JP JP8729775A patent/JPS5211778A/en active Granted
Also Published As
Publication number | Publication date |
---|---|
JPS5631900B2 (en) | 1981-07-24 |
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