JPS5346290A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5346290A
JPS5346290A JP12043276A JP12043276A JPS5346290A JP S5346290 A JPS5346290 A JP S5346290A JP 12043276 A JP12043276 A JP 12043276A JP 12043276 A JP12043276 A JP 12043276A JP S5346290 A JPS5346290 A JP S5346290A
Authority
JP
Japan
Prior art keywords
semiconductor device
conductive plate
cathode electrodes
thyristor
disposing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12043276A
Other languages
Japanese (ja)
Other versions
JPS5923115B2 (en
Inventor
Masayuki Asaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP51120432A priority Critical patent/JPS5923115B2/en
Publication of JPS5346290A publication Critical patent/JPS5346290A/en
Publication of JPS5923115B2 publication Critical patent/JPS5923115B2/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/04Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41716Cathode or anode electrodes for thyristors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To avert contact failure between cathode electrodes and a conductive plate by making common the plural cathode electrodes provided on top of a gate turn-off thyristor and disposing the conductive plate over this.
JP51120432A 1976-10-08 1976-10-08 Mesa type semiconductor device Expired JPS5923115B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP51120432A JPS5923115B2 (en) 1976-10-08 1976-10-08 Mesa type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51120432A JPS5923115B2 (en) 1976-10-08 1976-10-08 Mesa type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5346290A true JPS5346290A (en) 1978-04-25
JPS5923115B2 JPS5923115B2 (en) 1984-05-30

Family

ID=14786059

Family Applications (1)

Application Number Title Priority Date Filing Date
JP51120432A Expired JPS5923115B2 (en) 1976-10-08 1976-10-08 Mesa type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5923115B2 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138261A (en) * 1979-04-12 1980-10-28 Nec Corp Semiconductor device
JPS5610961A (en) * 1979-07-06 1981-02-03 Mitsubishi Electric Corp Semiconductor device
JPS57114279A (en) * 1981-01-08 1982-07-16 Hitachi Ltd Semiconductor device and manufacture thereof
JPS5871656A (en) * 1981-10-23 1983-04-28 Toshiba Corp Pressure contact semiconductor device
JPS6074571A (en) * 1983-09-30 1985-04-26 Toshiba Corp Semiconductor device and manufacture thereof

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55138261A (en) * 1979-04-12 1980-10-28 Nec Corp Semiconductor device
JPS6331946B2 (en) * 1979-04-12 1988-06-27 Nippon Denki Kk
JPS5610961A (en) * 1979-07-06 1981-02-03 Mitsubishi Electric Corp Semiconductor device
JPS57114279A (en) * 1981-01-08 1982-07-16 Hitachi Ltd Semiconductor device and manufacture thereof
JPH0136271B2 (en) * 1981-01-08 1989-07-31 Hitachi Ltd
JPS5871656A (en) * 1981-10-23 1983-04-28 Toshiba Corp Pressure contact semiconductor device
JPS6074571A (en) * 1983-09-30 1985-04-26 Toshiba Corp Semiconductor device and manufacture thereof
JPH0542815B2 (en) * 1983-09-30 1993-06-29 Tokyo Shibaura Electric Co

Also Published As

Publication number Publication date
JPS5923115B2 (en) 1984-05-30

Similar Documents

Publication Publication Date Title
JPS56131955A (en) Semiconductor device
JPS53110386A (en) Semiconductor device
JPS5346290A (en) Semiconductor device
GB866167A (en) Improvements relating to switch contact assemblies
JPS5762562A (en) Semiconductor device
JPS5384570A (en) Field effect semiconductor device and its manufacture
JPS5726471A (en) Semiconductor device
JPS56126971A (en) Thin film field effect element
JPS5395584A (en) Mesa type semiconductor device
JPS56165358A (en) Semiconductor device
JPS56167353A (en) Pressure-welding type semiconductor device
JPS53135582A (en) Semiconductor device and its manufacture
JPS5211778A (en) Semiconductor controlled rectifier
JPS5380978A (en) Semiconductor device
JPS5395583A (en) Mesa type semiconductor device
GB1030670A (en) Semiconductor devices
JPS53117966A (en) Semiconductor device
JPS5215272A (en) Semiconductor device
JPS535988A (en) Sealing structure of crystal vibrator
JPS5287990A (en) Semiconductor device
JPS5380980A (en) Semiconductor device
JPS5368556A (en) Gate circuit for gate turn-off thyristor
JPS52153655A (en) Gate circuit for thyristor
JPS5419373A (en) Semiconductor device
JPS51123574A (en) Semiconductor switching device