JPS56167353A - Pressure-welding type semiconductor device - Google Patents

Pressure-welding type semiconductor device

Info

Publication number
JPS56167353A
JPS56167353A JP7057380A JP7057380A JPS56167353A JP S56167353 A JPS56167353 A JP S56167353A JP 7057380 A JP7057380 A JP 7057380A JP 7057380 A JP7057380 A JP 7057380A JP S56167353 A JPS56167353 A JP S56167353A
Authority
JP
Japan
Prior art keywords
ring
pressure
positioning
section
circumferential wall
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7057380A
Other languages
Japanese (ja)
Other versions
JPS6127901B2 (en
Inventor
Yuzuru Konishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7057380A priority Critical patent/JPS56167353A/en
Publication of JPS56167353A publication Critical patent/JPS56167353A/en
Publication of JPS6127901B2 publication Critical patent/JPS6127901B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To prevent the short-circuit between electrodes when a thyristor is provided with the device for example by a method wherein a circumferential wall is provided on the peripheral section of the main electrode plate, having a penetrating hole to be used for a gate lead, and a positioning is performed by surrounding the main electrode conductive material with the circumferential wall. CONSTITUTION:In the case of a pressure-welding type thyristor, the cathode ring 7a to be pressure-welded to an Al cathode electrode 3 is constituted by the thin plate consisting of an Mo, for example, having a circumferential wall. A protruding section 71 is provided on the circumferential section of the ring 7a and the positioning of the ring 7a is done by abutting contact between the protruded section 71 and a copper block 8. The gate lead 5 is pressure-welded to the gate electrode 2 after it has been passed through the penetrating hole provided on the block 8 and the ring 7a using an insulated supporting rod 6. Through these procedures, the positioning can be performed easily and no positional deviation of the ring 7a is generated, thereby enabling to prevent the short-circuit between the electrodes.
JP7057380A 1980-05-26 1980-05-26 Pressure-welding type semiconductor device Granted JPS56167353A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7057380A JPS56167353A (en) 1980-05-26 1980-05-26 Pressure-welding type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7057380A JPS56167353A (en) 1980-05-26 1980-05-26 Pressure-welding type semiconductor device

Publications (2)

Publication Number Publication Date
JPS56167353A true JPS56167353A (en) 1981-12-23
JPS6127901B2 JPS6127901B2 (en) 1986-06-27

Family

ID=13435423

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7057380A Granted JPS56167353A (en) 1980-05-26 1980-05-26 Pressure-welding type semiconductor device

Country Status (1)

Country Link
JP (1) JPS56167353A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998043301A1 (en) * 1997-03-26 1998-10-01 Hitachi, Ltd. Flat semiconductor device and power converter employing the same

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4727471B2 (en) * 2006-03-22 2011-07-20 株式会社豊田中央研究所 Semiconductor device
DE102018130019B4 (en) * 2018-11-27 2021-02-25 Azl Aachen Gmbh Device for pressing processing of flat material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998043301A1 (en) * 1997-03-26 1998-10-01 Hitachi, Ltd. Flat semiconductor device and power converter employing the same

Also Published As

Publication number Publication date
JPS6127901B2 (en) 1986-06-27

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