JPS5734353A - Resin sealed type semiconductor device - Google Patents

Resin sealed type semiconductor device

Info

Publication number
JPS5734353A
JPS5734353A JP10993880A JP10993880A JPS5734353A JP S5734353 A JPS5734353 A JP S5734353A JP 10993880 A JP10993880 A JP 10993880A JP 10993880 A JP10993880 A JP 10993880A JP S5734353 A JPS5734353 A JP S5734353A
Authority
JP
Japan
Prior art keywords
plate
semiconductor device
chip
anode
coating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10993880A
Other languages
Japanese (ja)
Other versions
JPS6011466B2 (en
Inventor
Toshihiro Nakajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP55109938A priority Critical patent/JPS6011466B2/en
Publication of JPS5734353A publication Critical patent/JPS5734353A/en
Publication of JPS6011466B2 publication Critical patent/JPS6011466B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01033—Arsenic [As]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01042—Molybdenum [Mo]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1301—Thyristor

Abstract

PURPOSE:To prevent the deterioration in characteristics of the subject semiconductor device due to the generation of breakage and crack of chip by a method wherein the flowing out of coating material when coating work is performed is prevented by providing a barrier on the outer circumference of the main electrode plate whereon the chip, on which beveling is performed, will be soldered. CONSTITUTION:The barrier 14 is provided on the circumference of the Ni cladded Mo anode plate 13 and, for example, a thyristor chip 1, an Ni cladded Mo cathode plate 4, a cathode terminal 5 and a gate lead 6 are formed in one body using a high temperature solder 3a-3d. Then, after the anode plate 13 has been fixed on an anode base plate 8 using low temperature solder 9, the above is solidified by coating silicone rubber 10. Subsequently, a resin case 11 is fixed on the base plate 8 and an assembled body is sealed by pouring epoxy resin 12 into the case 11. As a result, no coating material flows out even when the low viscosity silicone rubber 10, with which no gap is generated between the beveling part and the anode plate 13, is used thereby enabling to increase reliability for the semiconductor device.
JP55109938A 1980-08-08 1980-08-08 Resin-encapsulated semiconductor device Expired JPS6011466B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55109938A JPS6011466B2 (en) 1980-08-08 1980-08-08 Resin-encapsulated semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55109938A JPS6011466B2 (en) 1980-08-08 1980-08-08 Resin-encapsulated semiconductor device

Publications (2)

Publication Number Publication Date
JPS5734353A true JPS5734353A (en) 1982-02-24
JPS6011466B2 JPS6011466B2 (en) 1985-03-26

Family

ID=14522909

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55109938A Expired JPS6011466B2 (en) 1980-08-08 1980-08-08 Resin-encapsulated semiconductor device

Country Status (1)

Country Link
JP (1) JPS6011466B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0102058A2 (en) * 1982-08-30 1984-03-07 Siemens Aktiengesellschaft Semiconductor component with pressure contact
JP2019161133A (en) * 2018-03-16 2019-09-19 株式会社デンソー Power semiconductor device, rotary electric machine with the same, and manufacturing method of power semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0102058A2 (en) * 1982-08-30 1984-03-07 Siemens Aktiengesellschaft Semiconductor component with pressure contact
EP0102058A3 (en) * 1982-08-30 1985-06-19 Siemens Aktiengesellschaft Semiconductor component with pressure contact
JP2019161133A (en) * 2018-03-16 2019-09-19 株式会社デンソー Power semiconductor device, rotary electric machine with the same, and manufacturing method of power semiconductor device
CN110277882A (en) * 2018-03-16 2019-09-24 株式会社电装 Power semiconductor, the rotating electric machine with the power semiconductor and the method for manufacturing power semiconductor

Also Published As

Publication number Publication date
JPS6011466B2 (en) 1985-03-26

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