JPS5518029A - Method of fabricating resin sealed type semiconductor device - Google Patents

Method of fabricating resin sealed type semiconductor device

Info

Publication number
JPS5518029A
JPS5518029A JP9068778A JP9068778A JPS5518029A JP S5518029 A JPS5518029 A JP S5518029A JP 9068778 A JP9068778 A JP 9068778A JP 9068778 A JP9068778 A JP 9068778A JP S5518029 A JPS5518029 A JP S5518029A
Authority
JP
Japan
Prior art keywords
lead wires
solder
pellet
film
fitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9068778A
Other languages
Japanese (ja)
Inventor
Kimihiro Hanya
Katsuki Iwasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP9068778A priority Critical patent/JPS5518029A/en
Publication of JPS5518029A publication Critical patent/JPS5518029A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To provide a resin sealed device of high quality and high reliability by use of lead wires provided at their full surfaces with a solder film. CONSTITUTION:A solder film is formed on the entire surfaces of lead wires 1a through 3a. When the lead wire 1a is heated in N2 to melt the solder on the surfaces thereof and rubbed against the collector electrode of a pellet 6a, the collector electrode of Ti-Ni-Au structure is easily soldered on the lead wires. Then the emitter and base electrodes are connected 7 to lead wires 2a and 3a by heat press-fitting. As the solder on the lead wires, a silver-containing high melting point solder is used to prevent the movement of the pellet by the heat pressure fitting. Ultimately, the required parts of the lead wires are sealed with a resin. In this organization, a film of a precious metal layer is unrequired, and the cost for material is reduced. The pellet press fitting temperature can be lowered by more than 1000 deg.C as compared with that of the conventional method, and therefore no characteristic deterioration of the pellet is produced and the reliability of the device is improved.
JP9068778A 1978-07-24 1978-07-24 Method of fabricating resin sealed type semiconductor device Pending JPS5518029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9068778A JPS5518029A (en) 1978-07-24 1978-07-24 Method of fabricating resin sealed type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9068778A JPS5518029A (en) 1978-07-24 1978-07-24 Method of fabricating resin sealed type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5518029A true JPS5518029A (en) 1980-02-07

Family

ID=14005437

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9068778A Pending JPS5518029A (en) 1978-07-24 1978-07-24 Method of fabricating resin sealed type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5518029A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59189580A (en) * 1983-04-08 1984-10-27 株式会社日立製作所 Induction heater and controlling method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59189580A (en) * 1983-04-08 1984-10-27 株式会社日立製作所 Induction heater and controlling method

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