JPS54140470A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS54140470A
JPS54140470A JP4772378A JP4772378A JPS54140470A JP S54140470 A JPS54140470 A JP S54140470A JP 4772378 A JP4772378 A JP 4772378A JP 4772378 A JP4772378 A JP 4772378A JP S54140470 A JPS54140470 A JP S54140470A
Authority
JP
Japan
Prior art keywords
electrode
glass
lead
disk
barrel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4772378A
Other languages
Japanese (ja)
Inventor
Toshiki Kurosu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP4772378A priority Critical patent/JPS54140470A/en
Publication of JPS54140470A publication Critical patent/JPS54140470A/en
Pending legal-status Critical Current

Links

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE: To extend the bonding part of the sealing glass to the electrode up to the main part where the lead is provided, and thus to reduce the length of the electrode by the amount equivalent to the extension of the bonding part.
CONSTITUTION: The upper and lower electrode leads 8 and 9 touch silver vamp 5 and silver layer 7 of semiconductor pellet 1. The electrode lead is composed of Mo electrode 8a and Ni-plated copper lead 8b, and glass inner barrel 10a is put to be then covered with glass outer barrel 10b. Then ceramic disk 11 and 12 are applied across barrel 10b via solder material 13 and 14. Thus, each parts is mounted to the tool and then made to pass through the heating furnace. As a result, both the inner and outer barrels are unified to form dealing glass 10 as well as to be adhered with electrode 8 and 9 plus disk 11 and 12 with soldering 13 and 14 of disk 11 and 12 at the lead area. In this way, the sealing, conducting and heat radiating performance can be improved.
COPYRIGHT: (C)1979,JPO&Japio
JP4772378A 1978-04-24 1978-04-24 Semiconductor device Pending JPS54140470A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4772378A JPS54140470A (en) 1978-04-24 1978-04-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4772378A JPS54140470A (en) 1978-04-24 1978-04-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS54140470A true JPS54140470A (en) 1979-10-31

Family

ID=12783235

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4772378A Pending JPS54140470A (en) 1978-04-24 1978-04-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS54140470A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248902A (en) * 1991-08-30 1993-09-28 General Instrument Corporation Surface mounting diode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5248902A (en) * 1991-08-30 1993-09-28 General Instrument Corporation Surface mounting diode

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