JPS54154973A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54154973A
JPS54154973A JP6341278A JP6341278A JPS54154973A JP S54154973 A JPS54154973 A JP S54154973A JP 6341278 A JP6341278 A JP 6341278A JP 6341278 A JP6341278 A JP 6341278A JP S54154973 A JPS54154973 A JP S54154973A
Authority
JP
Japan
Prior art keywords
junction
pni
copper disk
buffer plate
heat buffer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6341278A
Other languages
Japanese (ja)
Inventor
Koichiro Atsumi
Mitsuo Makino
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP6341278A priority Critical patent/JPS54154973A/en
Publication of JPS54154973A publication Critical patent/JPS54154973A/en
Pending legal-status Critical Current

Links

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To secure junction between the copper disk and the heat buffer plate with no use of the expensive silver solder material but by using PNi between the copper disk and the buffer plate.
CONSTITUTION: When joining the copper disk with the heat buffer plate, the plating of PNi (P: 3W15wt%) is applied to either of them. Then, heat buffer plate 5 is pressed to copper disk 2 about 25gr/mm and then joined together through the furnace of 1000°C. The adhesive performance is increased and the gas is exhausted by the pressure to improve the wetting property and thus secure good junction. Thus, the PNi solder material which could not be used so far can be soldered with pressure, reducing down the material cost. Furthermore, the PNi junction material is used like the junction between flange 1 and the copper disk, and as a result the temperature becomes identical within the furnace to complete the process with just one junction.
COPYRIGHT: (C)1979,JPO&Japio
JP6341278A 1978-05-29 1978-05-29 Manufacture of semiconductor device Pending JPS54154973A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6341278A JPS54154973A (en) 1978-05-29 1978-05-29 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6341278A JPS54154973A (en) 1978-05-29 1978-05-29 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54154973A true JPS54154973A (en) 1979-12-06

Family

ID=13228541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6341278A Pending JPS54154973A (en) 1978-05-29 1978-05-29 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54154973A (en)

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