JPS5446467A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5446467A
JPS5446467A JP11212277A JP11212277A JPS5446467A JP S5446467 A JPS5446467 A JP S5446467A JP 11212277 A JP11212277 A JP 11212277A JP 11212277 A JP11212277 A JP 11212277A JP S5446467 A JPS5446467 A JP S5446467A
Authority
JP
Japan
Prior art keywords
electrodes
compound
lower electrode
thermal expansivity
fiber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11212277A
Other languages
Japanese (ja)
Other versions
JPS5841770B2 (en
Inventor
Shigeru Kokuuchi
Masao Tsuruoka
Keiichi Morita
Keiichi Kuniya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP11212277A priority Critical patent/JPS5841770B2/en
Publication of JPS5446467A publication Critical patent/JPS5446467A/en
Publication of JPS5841770B2 publication Critical patent/JPS5841770B2/en
Expired legal-status Critical Current

Links

Landscapes

  • Die Bonding (AREA)
  • Bipolar Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE: To reduce the cose by eliminating the need of expensive W, No, etc., by brazing of forming either or both the upper electrode and lower electrode to be provided to a flat semiconductor device by using a compound of Cu-C fiber nearly equal in thermal expansivity to Si.
CONSTITUTION: The Si substrate provided with the element region is sandwiched between upper elecrrode 1A and lower electrode 2A and then brazed first, they are inserted into cylindrical insulation seal 8 through positioning guide rings 10, and seal 8 and electrodes 1A and 2A are fixed by flange 9. At this time, both electrodes 1A and 2A, or either one is formed of a compound of Cu-C fiber. Selecting a compounding ratio between Cu and C at this time enables its thermal expansivity to approximate to that of Si, and stress upon the Si substrate becomes small. In addition, its cost decreases, lightweight device is realized, and the fabrication is simplified
COPYRIGHT: (C)1979,JPO&Japio
JP11212277A 1977-09-20 1977-09-20 semiconductor equipment Expired JPS5841770B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11212277A JPS5841770B2 (en) 1977-09-20 1977-09-20 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11212277A JPS5841770B2 (en) 1977-09-20 1977-09-20 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS5446467A true JPS5446467A (en) 1979-04-12
JPS5841770B2 JPS5841770B2 (en) 1983-09-14

Family

ID=14578730

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11212277A Expired JPS5841770B2 (en) 1977-09-20 1977-09-20 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5841770B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62152464U (en) * 1986-03-19 1987-09-28

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60213681A (en) * 1984-04-06 1985-10-25 三菱電機株式会社 Hydraulic elevator device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62152464U (en) * 1986-03-19 1987-09-28

Also Published As

Publication number Publication date
JPS5841770B2 (en) 1983-09-14

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