JPS54104287A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS54104287A JPS54104287A JP1049778A JP1049778A JPS54104287A JP S54104287 A JPS54104287 A JP S54104287A JP 1049778 A JP1049778 A JP 1049778A JP 1049778 A JP1049778 A JP 1049778A JP S54104287 A JPS54104287 A JP S54104287A
- Authority
- JP
- Japan
- Prior art keywords
- carbon fiber
- complex
- copper
- size
- brazing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Die Bonding (AREA)
Abstract
PURPOSE:To make the support-electrode size of a copper-carbon fiber complex substantially unchangeable before or after the manufacture of a device. CONSTITUTION:Support electrode 1 of a copper-carbon fiber complex, when brazed to package 2, is heated at its maximum, so that its size will vary. As the elastic energy of carbon fiber is emitted by heating, a protrusion is made on the brazing surface of the support electrode, so that a brazing defect will be caused. After temporary heating, however, the size will not vary by second heating below the previous temperature. That results from that as copper become soft, the elastic energy of the carbon fiber is emitted to allow the complex to be close to its steady state. Before being built in the device, the complex is heated up to the brazing temperature of the package and support electrode or above, so that the size variation can be suppressed. In addition, carbon fiber is contained to 30% or more the complex is buried in copper or copper alloy spirally to obtain small thermal expansivity and excellent thermal conductivity; and then, it is the most effective to use the spiral surface as a junction surface to the semiconductor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1049778A JPS5816615B2 (en) | 1978-02-03 | 1978-02-03 | Manufacturing method of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1049778A JPS5816615B2 (en) | 1978-02-03 | 1978-02-03 | Manufacturing method of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS54104287A true JPS54104287A (en) | 1979-08-16 |
| JPS5816615B2 JPS5816615B2 (en) | 1983-04-01 |
Family
ID=11751821
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1049778A Expired JPS5816615B2 (en) | 1978-02-03 | 1978-02-03 | Manufacturing method of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5816615B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0290819U (en) * | 1988-12-30 | 1990-07-18 |
-
1978
- 1978-02-03 JP JP1049778A patent/JPS5816615B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5816615B2 (en) | 1983-04-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS54104287A (en) | Manufacture of semiconductor device | |
| JPS5512730A (en) | Semiconductor device | |
| JPS54111766A (en) | Coupling construction of lead and heat sink in semiconductor device | |
| JPS5578552A (en) | Semiconductor | |
| JPS52132438A (en) | Exothermic device | |
| JPS52145839A (en) | Solar heater | |
| JPS5445575A (en) | Manufacture for semiconductor device | |
| JPS54140470A (en) | Semiconductor device | |
| JPS52117075A (en) | Semiconductor device | |
| JPS52114158A (en) | Manufacturing of terrestrial heat power generation heat transfer pipe | |
| JPS5399539A (en) | Positive characteristic thermister heat generating body | |
| JPS5515265A (en) | Collet for assembling semiconductor device | |
| JPS52135281A (en) | Semiconductor device | |
| JPS54134558A (en) | Semiconductor device | |
| JPS556855A (en) | Heat sensitive thyristor | |
| JPS5338256A (en) | Manufacture of carbide point emitter | |
| JPS5525778A (en) | Solar heat collector of preventing action without water | |
| JPS54105969A (en) | Cooling device for semiconductor element | |
| JPS54106892A (en) | Natural circulation cooler for multiple duct-laid cable | |
| JPS5352068A (en) | Production of semicoductor unit | |
| JPS54136443A (en) | Sheath heater | |
| JPS5465475A (en) | Semiconductor device | |
| JPS5493964A (en) | Vessel for semiconductor device | |
| JPS5359382A (en) | Thermal sensitive element | |
| JPS5418289A (en) | Manufacture of semiconductor device with radiator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20060214 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20050824 |
|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060509 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20080122 |
|
| A61 | First payment of annual fees (during grant procedure) |
Effective date: 20080221 Free format text: JAPANESE INTERMEDIATE CODE: A61 |
|
| A72 | Notification of change in name of applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A721 Effective date: 20080221 |
|
| R150 | Certificate of patent (=grant) or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Year of fee payment: 3 Free format text: PAYMENT UNTIL: 20110321 |
|
| FPAY | Renewal fee payment (prs date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20110321 Year of fee payment: 3 |
|
| LAPS | Cancellation because of no payment of annual fees |