JPS556855A - Heat sensitive thyristor - Google Patents

Heat sensitive thyristor

Info

Publication number
JPS556855A
JPS556855A JP7900878A JP7900878A JPS556855A JP S556855 A JPS556855 A JP S556855A JP 7900878 A JP7900878 A JP 7900878A JP 7900878 A JP7900878 A JP 7900878A JP S556855 A JPS556855 A JP S556855A
Authority
JP
Japan
Prior art keywords
heat sensitive
nearer
gate electrode
sensitive thyristor
collector junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7900878A
Other languages
Japanese (ja)
Inventor
Josuke Nakada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7900878A priority Critical patent/JPS556855A/en
Publication of JPS556855A publication Critical patent/JPS556855A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To lower switching temperature, by mounting a low lifetime range to portions that are nearer to emitter junction than a gate electrode.
CONSTITUTION: A low lifetime range 8 is not formed on a collector junction surface located at distances that are nearer to a P gate electrode 11 than a cathode 9 in a heat sensitive thyristor 30. That is, the low lifetime range 8 is made up in a shape that is limited on a remaining surface of collector junction 4 except the collector junction surface located at distances that are nearer to the P gate electrode 11 than the cathode 9. Thus, the heat sensitive thyristor with low switching temperature can be obtained because OFF currents are decreased.
COPYRIGHT: (C)1980,JPO&Japio
JP7900878A 1978-06-28 1978-06-28 Heat sensitive thyristor Pending JPS556855A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7900878A JPS556855A (en) 1978-06-28 1978-06-28 Heat sensitive thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7900878A JPS556855A (en) 1978-06-28 1978-06-28 Heat sensitive thyristor

Publications (1)

Publication Number Publication Date
JPS556855A true JPS556855A (en) 1980-01-18

Family

ID=13677911

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7900878A Pending JPS556855A (en) 1978-06-28 1978-06-28 Heat sensitive thyristor

Country Status (1)

Country Link
JP (1) JPS556855A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58193231U (en) * 1982-06-18 1983-12-22 三井造船株式会社 Seal parts for pipe hydraulic testing machines
JPH0559861U (en) * 1992-01-13 1993-08-06 日亜化学工業株式会社 Gallium nitride compound semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58193231U (en) * 1982-06-18 1983-12-22 三井造船株式会社 Seal parts for pipe hydraulic testing machines
JPH0559861U (en) * 1992-01-13 1993-08-06 日亜化学工業株式会社 Gallium nitride compound semiconductor device

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