JPS55138863A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55138863A
JPS55138863A JP4685279A JP4685279A JPS55138863A JP S55138863 A JPS55138863 A JP S55138863A JP 4685279 A JP4685279 A JP 4685279A JP 4685279 A JP4685279 A JP 4685279A JP S55138863 A JPS55138863 A JP S55138863A
Authority
JP
Japan
Prior art keywords
metallic terminal
heading
dhd
solder
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4685279A
Other languages
Japanese (ja)
Inventor
Koji Kawanami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP4685279A priority Critical patent/JPS55138863A/en
Publication of JPS55138863A publication Critical patent/JPS55138863A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/492—Bases or plates or solder therefor
    • H01L23/4924—Bases or plates or solder therefor characterised by the materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Die Bonding (AREA)

Abstract

PURPOSE:To eliminate the improper contact of the heading portion of a slag lead wire of a DHD-type semiconductor device and the displacement of an electrode thereof by coating a thermally melting agent on the heading surface of a metallic terminal. CONSTITUTION:Ag solder 3 is coated on the heading surface 2 of a metallic terminal of a semiconductor pellet 1, the pellet 1, a raised electrode 5 and a metallic terminal 2 are thermally molten respectively when melting the glass sleeve 4 at a sealing temperature of 650 deg.-750 deg.C to provide a DHD-type configuration. It is preferred to select the Ag solder 3 so as to have lower melting point than the glass sealing temperature.
JP4685279A 1979-04-17 1979-04-17 Semiconductor device Pending JPS55138863A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4685279A JPS55138863A (en) 1979-04-17 1979-04-17 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4685279A JPS55138863A (en) 1979-04-17 1979-04-17 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS55138863A true JPS55138863A (en) 1980-10-30

Family

ID=12758864

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4685279A Pending JPS55138863A (en) 1979-04-17 1979-04-17 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS55138863A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788941U (en) * 1980-11-19 1982-06-01
JPS58442U (en) * 1981-06-25 1983-01-05 富士通株式会社 semiconductor equipment
JPS58443U (en) * 1981-06-25 1983-01-05 富士通株式会社 semiconductor equipment

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5788941U (en) * 1980-11-19 1982-06-01
JPS58442U (en) * 1981-06-25 1983-01-05 富士通株式会社 semiconductor equipment
JPS58443U (en) * 1981-06-25 1983-01-05 富士通株式会社 semiconductor equipment

Similar Documents

Publication Publication Date Title
GB970428A (en) Improvements in or relating to methods of manufacturing semi-conductor devices
JPS55138863A (en) Semiconductor device
GB757561A (en) Improvements in or relating to method of coating fibrous glass and apparatus therefor
ATE15503T1 (en) ELECTRODE FOR MOLTEN ELECTROLYSIS.
ATE4092T1 (en) SOLDER ALLOYS FOR DIRECT SOLDERING OF SILVER CONTACTS CONTAINING OXIDE ON CONTACT CARRIER.
JPS5593238A (en) Manufacture of semiconductor device
GB977261A (en) Improvements in bonding metal oxide bodies to metal bodies
ES8501276A1 (en) Solder alloys for brazing contact materials.
JPS5432160A (en) Manufacture of precious metal covered wire
JPS554904A (en) Semi-conductor device
JPS52129280A (en) Wire bonding method
JPS5518029A (en) Method of fabricating resin sealed type semiconductor device
SONNENSCHEIN et al. Method for attaching a fused-quartz mirror to a conductive metal substrate[Patent]
JPS5662342A (en) Semiconductor device
JPS5661153A (en) Connection of lead wire
SU97100A1 (en) Tubular diode discharge and method of its manufacture
JPS5466573A (en) Method of fabricating miniature bulb
GB859561A (en) Method for joining parts, at least one of which is of glass, and article made by said method
JPS51129174A (en) Manufacturing method of semi conductor
JPS55148445A (en) Semiconductor device
JPS5443456A (en) Low fusing-point glass sealing lead
JPS5417664A (en) Manufacture of electrode for semiconductor element
GB781884A (en) Improvements in or relating to devices embodying semi-conductors
JPS54158890A (en) Semiconductor light emitting device
JPS5326573A (en) Semiconductor uni t