JPS5395584A - Mesa type semiconductor device - Google Patents
Mesa type semiconductor deviceInfo
- Publication number
- JPS5395584A JPS5395584A JP920277A JP920277A JPS5395584A JP S5395584 A JPS5395584 A JP S5395584A JP 920277 A JP920277 A JP 920277A JP 920277 A JP920277 A JP 920277A JP S5395584 A JPS5395584 A JP S5395584A
- Authority
- JP
- Japan
- Prior art keywords
- type semiconductor
- mesa type
- semiconductor device
- pressing plate
- cathode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/744—Gate-turn-off devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Bipolar Transistors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To prevent the cathode and gate electrodes from being shortened by avoiding the pending down of Al, through the constitution of the cathode pressing plate enabling to press the most external part at the top of the mesa type semiconductor element and through the uniform contact of the pressing plate for the entire top area even with concave element.
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP920277A JPS5395584A (en) | 1977-02-01 | 1977-02-01 | Mesa type semiconductor device |
DE2757821A DE2757821C3 (en) | 1976-12-28 | 1977-12-23 | Method of manufacturing a mesa semiconductor device with pressure contact |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP920277A JPS5395584A (en) | 1977-02-01 | 1977-02-01 | Mesa type semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5395584A true JPS5395584A (en) | 1978-08-21 |
Family
ID=11713888
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP920277A Pending JPS5395584A (en) | 1976-12-28 | 1977-02-01 | Mesa type semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5395584A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61129836A (en) * | 1984-11-29 | 1986-06-17 | Toshiba Corp | Pressure-contact semiconductor device |
JPH03222365A (en) * | 1990-01-26 | 1991-10-01 | Toshiba Corp | Semiconductor device |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5056880A (en) * | 1973-09-17 | 1975-05-17 | ||
JPS51121259A (en) * | 1975-04-17 | 1976-10-23 | Agency Of Ind Science & Technol | Semiconductor device |
-
1977
- 1977-02-01 JP JP920277A patent/JPS5395584A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5056880A (en) * | 1973-09-17 | 1975-05-17 | ||
JPS51121259A (en) * | 1975-04-17 | 1976-10-23 | Agency Of Ind Science & Technol | Semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61129836A (en) * | 1984-11-29 | 1986-06-17 | Toshiba Corp | Pressure-contact semiconductor device |
JPH03222365A (en) * | 1990-01-26 | 1991-10-01 | Toshiba Corp | Semiconductor device |
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