JPS5578535A - Pressure-contact type semiconductor device - Google Patents

Pressure-contact type semiconductor device

Info

Publication number
JPS5578535A
JPS5578535A JP15225078A JP15225078A JPS5578535A JP S5578535 A JPS5578535 A JP S5578535A JP 15225078 A JP15225078 A JP 15225078A JP 15225078 A JP15225078 A JP 15225078A JP S5578535 A JPS5578535 A JP S5578535A
Authority
JP
Japan
Prior art keywords
pillar
elastic deformation
pressure
semiconductor device
type semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15225078A
Other languages
Japanese (ja)
Inventor
Mitsuo Odate
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15225078A priority Critical patent/JPS5578535A/en
Publication of JPS5578535A publication Critical patent/JPS5578535A/en
Pending legal-status Critical Current

Links

Landscapes

  • Die Bonding (AREA)

Abstract

PURPOSE: To absorb thermal stress through deformation of pillars by dividing a contact face with a main electrode of a main electrode conductor into plural pillars to facillitate an elastic deformation.
CONSTITUTION: A groove 12 narrow but deep to obtain plural pillar in squares is formed on a contact face with a cathode 2 of a diode element 1 for cathode conductor 7, thereby forming the pillar 13 divided and easy for elastic deformation. Accord ing to this constitution, a thermal stress working between the diode element 1 and the cathode conductor 7 due to heat generated by conducting current can be absorbed by elastic deformation of the pillar 13, and thus a thermal compensation plate necessary conventionally can be omitted.
COPYRIGHT: (C)1980,JPO&Japio
JP15225078A 1978-12-08 1978-12-08 Pressure-contact type semiconductor device Pending JPS5578535A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15225078A JPS5578535A (en) 1978-12-08 1978-12-08 Pressure-contact type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15225078A JPS5578535A (en) 1978-12-08 1978-12-08 Pressure-contact type semiconductor device

Publications (1)

Publication Number Publication Date
JPS5578535A true JPS5578535A (en) 1980-06-13

Family

ID=15536370

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15225078A Pending JPS5578535A (en) 1978-12-08 1978-12-08 Pressure-contact type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5578535A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180137A (en) * 1981-04-30 1982-11-06 Hitachi Ltd Semicondudtor device
EP0476661A2 (en) * 1990-09-20 1992-03-25 Kabushiki Kaisha Toshiba Press-contact type semiconductor device
US5489802A (en) * 1992-06-26 1996-02-06 Mitsubishi Denki Kabushiki Kaisha Pressure contact type semiconductor device and heat compensator
JP2010003870A (en) * 2008-06-20 2010-01-07 Denso Corp Semiconductor device and manufacturing method thereof

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57180137A (en) * 1981-04-30 1982-11-06 Hitachi Ltd Semicondudtor device
EP0476661A2 (en) * 1990-09-20 1992-03-25 Kabushiki Kaisha Toshiba Press-contact type semiconductor device
US5360985A (en) * 1990-09-20 1994-11-01 Kabushiki Kaisha Toshiba Press-contact type semiconductor device
US5489802A (en) * 1992-06-26 1996-02-06 Mitsubishi Denki Kabushiki Kaisha Pressure contact type semiconductor device and heat compensator
JP2010003870A (en) * 2008-06-20 2010-01-07 Denso Corp Semiconductor device and manufacturing method thereof

Similar Documents

Publication Publication Date Title
JPS5578535A (en) Pressure-contact type semiconductor device
JPS51151069A (en) Electrode forming method of a semiconductor element
JPS53117966A (en) Semiconductor device
JPS5362471A (en) Semiconductor device
JPS547271A (en) Semiconductor electrode structure
JPS52142484A (en) Production of semiconductor device
JPS5544734A (en) Semiconductor device
JPS5429580A (en) Semiconductor device
JPS5429974A (en) Semiconductor device of resin sealing type
JPS5451477A (en) Mounting method of semiconductor chip
JPS53147479A (en) Production of semiconductor device
JPS5275189A (en) Charge transfer device
JPS52147973A (en) Semiconductor device
JPS53144280A (en) Mis semiconductor device
JPS532077A (en) Semiconductor device
JPS53124974A (en) Semiconductor device
JPS5395586A (en) Manufacture for semiconductor element
JPS51141583A (en) Method for producing an electrode for use semiconductor units
JPS52151565A (en) Semiconductor device and its production
JPS5433662A (en) Semiconductor rectifier
JPS54162964A (en) Semiconductor device
JPS5379376A (en) Semiconductor device and its production
JPS5376763A (en) Semiconductor rectifying device
JPS5380978A (en) Semiconductor device
JPS5418289A (en) Manufacture of semiconductor device with radiator