JPS5631900B2 - - Google Patents

Info

Publication number
JPS5631900B2
JPS5631900B2 JP8729775A JP8729775A JPS5631900B2 JP S5631900 B2 JPS5631900 B2 JP S5631900B2 JP 8729775 A JP8729775 A JP 8729775A JP 8729775 A JP8729775 A JP 8729775A JP S5631900 B2 JPS5631900 B2 JP S5631900B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP8729775A
Other languages
Japanese (ja)
Other versions
JPS5211778A (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP8729775A priority Critical patent/JPS5211778A/en
Publication of JPS5211778A publication Critical patent/JPS5211778A/en
Publication of JPS5631900B2 publication Critical patent/JPS5631900B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
JP8729775A 1975-07-18 1975-07-18 Semiconductor controlled rectifier Granted JPS5211778A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8729775A JPS5211778A (en) 1975-07-18 1975-07-18 Semiconductor controlled rectifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8729775A JPS5211778A (en) 1975-07-18 1975-07-18 Semiconductor controlled rectifier

Publications (2)

Publication Number Publication Date
JPS5211778A JPS5211778A (en) 1977-01-28
JPS5631900B2 true JPS5631900B2 (en) 1981-07-24

Family

ID=13910873

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8729775A Granted JPS5211778A (en) 1975-07-18 1975-07-18 Semiconductor controlled rectifier

Country Status (1)

Country Link
JP (1) JPS5211778A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151063A (en) * 2010-01-19 2011-08-04 Sansha Electric Mfg Co Ltd Thyristor
JP2014135510A (en) * 2014-03-19 2014-07-24 Sansha Electric Mfg Co Ltd Thyristor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011151063A (en) * 2010-01-19 2011-08-04 Sansha Electric Mfg Co Ltd Thyristor
JP2014135510A (en) * 2014-03-19 2014-07-24 Sansha Electric Mfg Co Ltd Thyristor

Also Published As

Publication number Publication date
JPS5211778A (en) 1977-01-28

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