JPS5252377A - Gate turn-off thyristor - Google Patents

Gate turn-off thyristor

Info

Publication number
JPS5252377A
JPS5252377A JP50127439A JP12743975A JPS5252377A JP S5252377 A JPS5252377 A JP S5252377A JP 50127439 A JP50127439 A JP 50127439A JP 12743975 A JP12743975 A JP 12743975A JP S5252377 A JPS5252377 A JP S5252377A
Authority
JP
Japan
Prior art keywords
thyristor
gate turn
pnpn
applying
cathode electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50127439A
Other languages
Japanese (ja)
Inventor
Hiroshi Fukui
Yoshimi Sakurai
Yoshio Terasawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP50127439A priority Critical patent/JPS5252377A/en
Publication of JPS5252377A publication Critical patent/JPS5252377A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Power Conversion In General (AREA)
  • Thyristor Switches And Gates (AREA)

Abstract

PURPOSE:To perform efficient turning off by applying PNPN 4 layer structure only below cathode electrode 1 and transistor structure at amplifying part of gate current.
JP50127439A 1975-10-24 1975-10-24 Gate turn-off thyristor Pending JPS5252377A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP50127439A JPS5252377A (en) 1975-10-24 1975-10-24 Gate turn-off thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50127439A JPS5252377A (en) 1975-10-24 1975-10-24 Gate turn-off thyristor

Publications (1)

Publication Number Publication Date
JPS5252377A true JPS5252377A (en) 1977-04-27

Family

ID=14959964

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50127439A Pending JPS5252377A (en) 1975-10-24 1975-10-24 Gate turn-off thyristor

Country Status (1)

Country Link
JP (1) JPS5252377A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58101461A (en) * 1981-12-11 1983-06-16 Mitsubishi Electric Corp Gate turn-off thyristor
JPS58124088U (en) * 1982-02-17 1983-08-23 日本インター株式会社 Gate drive circuit for power gate turn-off thyristor
US4443810A (en) * 1979-01-24 1984-04-17 Hitachi, Ltd. Gate turn-off amplified thyristor with non-shorted auxiliary anode
JPS59217366A (en) * 1983-05-26 1984-12-07 Toshiba Corp Semiconductor device
JPS63122270A (en) * 1986-11-12 1988-05-26 Toshiba Components Kk Thyristor

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4443810A (en) * 1979-01-24 1984-04-17 Hitachi, Ltd. Gate turn-off amplified thyristor with non-shorted auxiliary anode
JPS58101461A (en) * 1981-12-11 1983-06-16 Mitsubishi Electric Corp Gate turn-off thyristor
JPS58124088U (en) * 1982-02-17 1983-08-23 日本インター株式会社 Gate drive circuit for power gate turn-off thyristor
JPS59217366A (en) * 1983-05-26 1984-12-07 Toshiba Corp Semiconductor device
JPH027191B2 (en) * 1983-05-26 1990-02-15 Tokyo Shibaura Electric Co
JPS63122270A (en) * 1986-11-12 1988-05-26 Toshiba Components Kk Thyristor

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