JPS5252377A - Gate turn-off thyristor - Google Patents
Gate turn-off thyristorInfo
- Publication number
- JPS5252377A JPS5252377A JP50127439A JP12743975A JPS5252377A JP S5252377 A JPS5252377 A JP S5252377A JP 50127439 A JP50127439 A JP 50127439A JP 12743975 A JP12743975 A JP 12743975A JP S5252377 A JPS5252377 A JP S5252377A
- Authority
- JP
- Japan
- Prior art keywords
- thyristor
- gate turn
- pnpn
- applying
- cathode electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7428—Thyristor-type devices, e.g. having four-zone regenerative action having an amplifying gate structure, e.g. cascade (Darlington) configuration
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
- Power Conversion In General (AREA)
- Thyristor Switches And Gates (AREA)
Abstract
PURPOSE:To perform efficient turning off by applying PNPN 4 layer structure only below cathode electrode 1 and transistor structure at amplifying part of gate current.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50127439A JPS5252377A (en) | 1975-10-24 | 1975-10-24 | Gate turn-off thyristor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50127439A JPS5252377A (en) | 1975-10-24 | 1975-10-24 | Gate turn-off thyristor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5252377A true JPS5252377A (en) | 1977-04-27 |
Family
ID=14959964
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50127439A Pending JPS5252377A (en) | 1975-10-24 | 1975-10-24 | Gate turn-off thyristor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5252377A (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58101461A (en) * | 1981-12-11 | 1983-06-16 | Mitsubishi Electric Corp | Gate turn-off thyristor |
JPS58124088U (en) * | 1982-02-17 | 1983-08-23 | 日本インター株式会社 | Gate drive circuit for power gate turn-off thyristor |
US4443810A (en) * | 1979-01-24 | 1984-04-17 | Hitachi, Ltd. | Gate turn-off amplified thyristor with non-shorted auxiliary anode |
JPS59217366A (en) * | 1983-05-26 | 1984-12-07 | Toshiba Corp | Semiconductor device |
JPS63122270A (en) * | 1986-11-12 | 1988-05-26 | Toshiba Components Kk | Thyristor |
-
1975
- 1975-10-24 JP JP50127439A patent/JPS5252377A/en active Pending
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4443810A (en) * | 1979-01-24 | 1984-04-17 | Hitachi, Ltd. | Gate turn-off amplified thyristor with non-shorted auxiliary anode |
JPS58101461A (en) * | 1981-12-11 | 1983-06-16 | Mitsubishi Electric Corp | Gate turn-off thyristor |
JPS58124088U (en) * | 1982-02-17 | 1983-08-23 | 日本インター株式会社 | Gate drive circuit for power gate turn-off thyristor |
JPS59217366A (en) * | 1983-05-26 | 1984-12-07 | Toshiba Corp | Semiconductor device |
JPH027191B2 (en) * | 1983-05-26 | 1990-02-15 | Tokyo Shibaura Electric Co | |
JPS63122270A (en) * | 1986-11-12 | 1988-05-26 | Toshiba Components Kk | Thyristor |
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