JPS51145282A - Thyrlstor - Google Patents

Thyrlstor

Info

Publication number
JPS51145282A
JPS51145282A JP7055475A JP7055475A JPS51145282A JP S51145282 A JPS51145282 A JP S51145282A JP 7055475 A JP7055475 A JP 7055475A JP 7055475 A JP7055475 A JP 7055475A JP S51145282 A JPS51145282 A JP S51145282A
Authority
JP
Japan
Prior art keywords
thyrlstor
turn
gcs
characteristic
large current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7055475A
Other languages
Japanese (ja)
Inventor
Takahiko Ichimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP7055475A priority Critical patent/JPS51145282A/en
Publication of JPS51145282A publication Critical patent/JPS51145282A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To get gate turn off type thyristor(GCS), with large current capacity and good turn-off characteristic.
JP7055475A 1975-06-10 1975-06-10 Thyrlstor Pending JPS51145282A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7055475A JPS51145282A (en) 1975-06-10 1975-06-10 Thyrlstor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7055475A JPS51145282A (en) 1975-06-10 1975-06-10 Thyrlstor

Publications (1)

Publication Number Publication Date
JPS51145282A true JPS51145282A (en) 1976-12-14

Family

ID=13434848

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7055475A Pending JPS51145282A (en) 1975-06-10 1975-06-10 Thyrlstor

Country Status (1)

Country Link
JP (1) JPS51145282A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0387721A2 (en) * 1989-03-14 1990-09-19 Siemens Aktiengesellschaft Thyristor having a particular switching behaviour

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0387721A2 (en) * 1989-03-14 1990-09-19 Siemens Aktiengesellschaft Thyristor having a particular switching behaviour

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