JPS5399879A - Junction-type field effect thyristor - Google Patents

Junction-type field effect thyristor

Info

Publication number
JPS5399879A
JPS5399879A JP1427777A JP1427777A JPS5399879A JP S5399879 A JPS5399879 A JP S5399879A JP 1427777 A JP1427777 A JP 1427777A JP 1427777 A JP1427777 A JP 1427777A JP S5399879 A JPS5399879 A JP S5399879A
Authority
JP
Japan
Prior art keywords
junction
field effect
type field
gate
effect thyristor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1427777A
Other languages
Japanese (ja)
Other versions
JPS5643664B2 (en
Inventor
Kenji Miyata
Yoshio Terasawa
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1427777A priority Critical patent/JPS5399879A/en
Publication of JPS5399879A publication Critical patent/JPS5399879A/en
Publication of JPS5643664B2 publication Critical patent/JPS5643664B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To obtain the appropriate structure for a large amount of currents with the voltage drop inside the gate region reduced by etching the semiconductor substrate vertically from its surface, by forming the gate-electrode lead-out part at the lower part than the cathode region, and by making the gate electrode part extremely narrow.
JP1427777A 1977-02-14 1977-02-14 Junction-type field effect thyristor Granted JPS5399879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1427777A JPS5399879A (en) 1977-02-14 1977-02-14 Junction-type field effect thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1427777A JPS5399879A (en) 1977-02-14 1977-02-14 Junction-type field effect thyristor

Publications (2)

Publication Number Publication Date
JPS5399879A true JPS5399879A (en) 1978-08-31
JPS5643664B2 JPS5643664B2 (en) 1981-10-14

Family

ID=11856583

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1427777A Granted JPS5399879A (en) 1977-02-14 1977-02-14 Junction-type field effect thyristor

Country Status (1)

Country Link
JP (1) JPS5399879A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562667A (en) * 1979-06-20 1981-01-12 Hitachi Ltd Semiconductor device and manufacture thereof
JPS56160245A (en) * 1980-05-15 1981-12-09 Honda Motor Co Ltd Antiskid braking control method
JPS572377U (en) * 1980-06-04 1982-01-07
WO1982001788A1 (en) * 1980-11-21 1982-05-27 Nishikzawa Junichi Static induction thyristor
JPS62117370A (en) * 1985-11-15 1987-05-28 Semiconductor Res Found Manufacture of double-gate electrostatic induction thyristor

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0319465Y2 (en) * 1985-01-05 1991-04-24

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562667A (en) * 1979-06-20 1981-01-12 Hitachi Ltd Semiconductor device and manufacture thereof
JPS6145395B2 (en) * 1979-06-20 1986-10-07 Hitachi Ltd
JPS56160245A (en) * 1980-05-15 1981-12-09 Honda Motor Co Ltd Antiskid braking control method
JPS6216857B2 (en) * 1980-05-15 1987-04-15 Honda Motor Co Ltd
JPS572377U (en) * 1980-06-04 1982-01-07
JPS6015097Y2 (en) * 1980-06-04 1985-05-13 富士電機株式会社 ice machine
WO1982001788A1 (en) * 1980-11-21 1982-05-27 Nishikzawa Junichi Static induction thyristor
EP0064561A1 (en) * 1980-11-21 1982-11-17 Zaidan Hozin Handotai Kenkyu Shinkokai Static induction thyristor
EP0064561B1 (en) * 1980-11-21 1986-05-28 Zaidan Hozin Handotai Kenkyu Shinkokai Static induction thyristor
JPS62117370A (en) * 1985-11-15 1987-05-28 Semiconductor Res Found Manufacture of double-gate electrostatic induction thyristor
JPH0257348B2 (en) * 1985-11-15 1990-12-04 Handotai Kenkyu Shinkokai

Also Published As

Publication number Publication date
JPS5643664B2 (en) 1981-10-14

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