JPS56125872A - Semiconductor switchgear and its manufacture - Google Patents
Semiconductor switchgear and its manufactureInfo
- Publication number
- JPS56125872A JPS56125872A JP2912980A JP2912980A JPS56125872A JP S56125872 A JPS56125872 A JP S56125872A JP 2912980 A JP2912980 A JP 2912980A JP 2912980 A JP2912980 A JP 2912980A JP S56125872 A JPS56125872 A JP S56125872A
- Authority
- JP
- Japan
- Prior art keywords
- electrode plates
- gate
- cathode
- unified
- plates
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
- H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
Abstract
PURPOSE:To uniformalize the action of active regions and improve reliability and producibility by a method wherein controlling electrode plates are formed, and the plates and one main electrode plates are unified through insulators. CONSTITUTION:Frame-shaped gate electrode plates 101 are made up which surround an N emitter group 5, the gate electrode plates 101 are unified with cathode electrode plates 10 through insulating films 102 and a gate-cathode unified electrode 100 is built up. The electrode plate 100 is pressure-welded to a base body 1 so that both the gate electrode plates 101 and a gate electrode 7 and both the cathode electrode plates 10 and cathode electrodes 6 contact. Thus, gate signals are equalized even to an active region near to a gate current extracting section 105 at the center of the base body 1 and an active region remote to the section, and the turn-OFF action of each active region is uniformalized.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2912980A JPS56125872A (en) | 1980-03-10 | 1980-03-10 | Semiconductor switchgear and its manufacture |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2912980A JPS56125872A (en) | 1980-03-10 | 1980-03-10 | Semiconductor switchgear and its manufacture |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56125872A true JPS56125872A (en) | 1981-10-02 |
Family
ID=12267681
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2912980A Pending JPS56125872A (en) | 1980-03-10 | 1980-03-10 | Semiconductor switchgear and its manufacture |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56125872A (en) |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5881962U (en) * | 1981-11-27 | 1983-06-03 | 日本インタ−ナシヨナル整流器株式会社 | Gate electrode structure of semiconductor device |
JPS58148433A (en) * | 1982-02-26 | 1983-09-03 | Mitsubishi Electric Corp | Semiconductor device |
JPS59159962U (en) * | 1983-04-12 | 1984-10-26 | 東洋電機製造株式会社 | Electrodes of semiconductor devices |
JPS61212065A (en) * | 1985-03-18 | 1986-09-20 | Hitachi Ltd | Semiconductor switching device |
JPS63301563A (en) * | 1987-01-29 | 1988-12-08 | Fuji Electric Co Ltd | Gate turn off thyrister |
JPH0325258U (en) * | 1989-07-24 | 1991-03-15 | ||
JPH03108764A (en) * | 1989-04-11 | 1991-05-08 | Fuji Electric Co Ltd | Semiconductor device |
JP2011258656A (en) * | 2010-06-07 | 2011-12-22 | Kansai Electric Power Co Inc:The | Bipolar semiconductor element |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54136186A (en) * | 1978-04-14 | 1979-10-23 | Hitachi Ltd | Semiconductor device |
-
1980
- 1980-03-10 JP JP2912980A patent/JPS56125872A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS54136186A (en) * | 1978-04-14 | 1979-10-23 | Hitachi Ltd | Semiconductor device |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5881962U (en) * | 1981-11-27 | 1983-06-03 | 日本インタ−ナシヨナル整流器株式会社 | Gate electrode structure of semiconductor device |
JPS58148433A (en) * | 1982-02-26 | 1983-09-03 | Mitsubishi Electric Corp | Semiconductor device |
JPH0245334B2 (en) * | 1982-02-26 | 1990-10-09 | Mitsubishi Electric Corp | |
JPS59159962U (en) * | 1983-04-12 | 1984-10-26 | 東洋電機製造株式会社 | Electrodes of semiconductor devices |
JPS61212065A (en) * | 1985-03-18 | 1986-09-20 | Hitachi Ltd | Semiconductor switching device |
JPS63301563A (en) * | 1987-01-29 | 1988-12-08 | Fuji Electric Co Ltd | Gate turn off thyrister |
JPH03108764A (en) * | 1989-04-11 | 1991-05-08 | Fuji Electric Co Ltd | Semiconductor device |
JPH0325258U (en) * | 1989-07-24 | 1991-03-15 | ||
JP2011258656A (en) * | 2010-06-07 | 2011-12-22 | Kansai Electric Power Co Inc:The | Bipolar semiconductor element |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6457674A (en) | Conductivity-modulation mosfet | |
EP0756330A3 (en) | Power semiconductor device with insulated trench gate and manufacturing method thereof | |
JPS5598858A (en) | Gate turn-off thyristor | |
JPS56125872A (en) | Semiconductor switchgear and its manufacture | |
JPS5762562A (en) | Semiconductor device | |
JPS56130969A (en) | Semiconductor device | |
JPS57172765A (en) | Electrostatic induction thyristor | |
JPS57138175A (en) | Controlled rectifier for semiconductor | |
JPS54113273A (en) | Field effect-type switching element | |
JPS57201078A (en) | Semiconductor and its manufacture | |
EP0157207A3 (en) | Gate turn-off thyristor | |
JPS5399879A (en) | Junction-type field effect thyristor | |
JPS5718360A (en) | Gate controlling semiconductor element | |
JPS57181160A (en) | Transistor | |
JPS57176781A (en) | Superconductive device | |
JPS5784175A (en) | Semiconductor device | |
JPS6453476A (en) | Superconducting three-terminal element and manufacture thereof | |
JPS5643768A (en) | Fet transistor and method of producing the same | |
JPS56146232A (en) | Manufacture of semiconductor device | |
JPS57197869A (en) | Semiconductor device | |
GB1030670A (en) | Semiconductor devices | |
JPS57206072A (en) | Semiconductor device | |
JPS5521184A (en) | Method of manufacturing schottky barrier-gate type electric field effect transistor | |
JPS57196570A (en) | Thyristor | |
JPS6425452A (en) | Semiconductor device |