JPS57172765A - Electrostatic induction thyristor - Google Patents

Electrostatic induction thyristor

Info

Publication number
JPS57172765A
JPS57172765A JP5722581A JP5722581A JPS57172765A JP S57172765 A JPS57172765 A JP S57172765A JP 5722581 A JP5722581 A JP 5722581A JP 5722581 A JP5722581 A JP 5722581A JP S57172765 A JPS57172765 A JP S57172765A
Authority
JP
Japan
Prior art keywords
layer
type
gate
thyristor
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5722581A
Other languages
Japanese (ja)
Other versions
JPH0241182B2 (en
Inventor
Junichi Nishizawa
Tadahiro Omi
Yoshio Terasawa
Masahiro Okamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HANDOUTAI KENKIYUU SHINKOUKAI
Hitachi Ltd
Semiconductor Research Foundation
Original Assignee
HANDOUTAI KENKIYUU SHINKOUKAI
Hitachi Ltd
Semiconductor Research Foundation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HANDOUTAI KENKIYUU SHINKOUKAI, Hitachi Ltd, Semiconductor Research Foundation filed Critical HANDOUTAI KENKIYUU SHINKOUKAI
Priority to JP5722581A priority Critical patent/JPS57172765A/en
Publication of JPS57172765A publication Critical patent/JPS57172765A/en
Publication of JPH0241182B2 publication Critical patent/JPH0241182B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42308—Gate electrodes for thyristors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7391—Gated diode structures
    • H01L29/7392—Gated diode structures with PN junction gate, e.g. field controlled thyristors (FCTh), static induction thyristors (SITh)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To shorten the switching time in the junction gate type thyristor, by providing a dielectric layer on the sides of the thyristor substrate at the part adjacent to a main current path, and forming an insulating gate electrode which is electrically connected with a gate electrode. CONSTITUTION:An N<-> type base layer 5 is formed on a P<+> type semiconductor substrate 4 which is to become anode layer, and an N<+> type cathode layer 6 is layered thereon. Mesa etching is performed to the middle of the layer 5 and the main current path is formed. Then SiO2 films 7 are deposited on the sides of the mesa part. P<+> type gate region 8 are diffused and formed in the layer 5 which is exposed to the bottom surfaces 103 of the mesa part. The insulating gate which is electrically connected to the gate electrodes 3 that are provided along the films 7 is provided. Thereafter, a cathode electrode 2 is attached to a surface 102 of the layer 6, and an anode electrode 1 is deposited on a back surface 101 of the substrate 4. In this constitution, the thyristor, whose switching operation, especially TURN ON operation, is fast, can be obtained.
JP5722581A 1981-04-17 1981-04-17 Electrostatic induction thyristor Granted JPS57172765A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5722581A JPS57172765A (en) 1981-04-17 1981-04-17 Electrostatic induction thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5722581A JPS57172765A (en) 1981-04-17 1981-04-17 Electrostatic induction thyristor

Publications (2)

Publication Number Publication Date
JPS57172765A true JPS57172765A (en) 1982-10-23
JPH0241182B2 JPH0241182B2 (en) 1990-09-14

Family

ID=13049581

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5722581A Granted JPS57172765A (en) 1981-04-17 1981-04-17 Electrostatic induction thyristor

Country Status (1)

Country Link
JP (1) JPS57172765A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144463A (en) * 1984-08-08 1986-03-04 Toyo Electric Mfg Co Ltd Emitter short-circuit structure of thyristor
US4952990A (en) * 1986-06-03 1990-08-28 Bbc Brown Boveri Ag. Gate turn-off power semiconductor component
DE4405682A1 (en) * 1993-02-23 1994-09-01 Nissan Motor Structure of a semiconductor arrangement
US5675169A (en) * 1993-02-21 1997-10-07 Nissan Motor Co., Ltd. Motor driving circuit with surge detection/protection and its structure in a semiconductor device
WO2000022679A1 (en) * 1998-10-09 2000-04-20 The Kansai Electric Power Co., Inc. Field-effect semiconductor device
JP2008311574A (en) * 2007-06-18 2008-12-25 Rohm Co Ltd Semiconductor device
US8766317B2 (en) 2007-06-18 2014-07-01 Rohm Co., Ltd. Semiconductor device
CN106024864A (en) * 2016-06-28 2016-10-12 长安大学 P-trench silicon-carbide static induction thyristor and manufacturing method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599774A (en) * 1979-01-26 1980-07-30 Semiconductor Res Found Electrostatic induction type thyristor
JPS55108768A (en) * 1979-02-13 1980-08-21 Semiconductor Res Found Electrostatic induction thyristor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5599774A (en) * 1979-01-26 1980-07-30 Semiconductor Res Found Electrostatic induction type thyristor
JPS55108768A (en) * 1979-02-13 1980-08-21 Semiconductor Res Found Electrostatic induction thyristor

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6144463A (en) * 1984-08-08 1986-03-04 Toyo Electric Mfg Co Ltd Emitter short-circuit structure of thyristor
US4952990A (en) * 1986-06-03 1990-08-28 Bbc Brown Boveri Ag. Gate turn-off power semiconductor component
US5675169A (en) * 1993-02-21 1997-10-07 Nissan Motor Co., Ltd. Motor driving circuit with surge detection/protection and its structure in a semiconductor device
DE4405682A1 (en) * 1993-02-23 1994-09-01 Nissan Motor Structure of a semiconductor arrangement
US5378911A (en) * 1993-02-23 1995-01-03 Nissan Motor Co., Ltd. Structure of semiconductor device
DE4405682C2 (en) * 1993-02-23 1999-01-14 Nissan Motor Structure of a semiconductor device
WO2000022679A1 (en) * 1998-10-09 2000-04-20 The Kansai Electric Power Co., Inc. Field-effect semiconductor device
EP1128443A1 (en) * 1998-10-09 2001-08-29 The Kansai Electric Power Co., Inc. Field-effect semiconductor device
US6600192B1 (en) 1998-10-09 2003-07-29 The Kansai Electric Power Co., Inc. Vertical field-effect semiconductor device with buried gate region
EP1128443A4 (en) * 1998-10-09 2007-08-01 Kansai Electric Power Co Field-effect semiconductor device
JP2008311574A (en) * 2007-06-18 2008-12-25 Rohm Co Ltd Semiconductor device
US8766317B2 (en) 2007-06-18 2014-07-01 Rohm Co., Ltd. Semiconductor device
CN106024864A (en) * 2016-06-28 2016-10-12 长安大学 P-trench silicon-carbide static induction thyristor and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0241182B2 (en) 1990-09-14

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