JPS5735338A - Semiconductor ic device - Google Patents

Semiconductor ic device

Info

Publication number
JPS5735338A
JPS5735338A JP10983780A JP10983780A JPS5735338A JP S5735338 A JPS5735338 A JP S5735338A JP 10983780 A JP10983780 A JP 10983780A JP 10983780 A JP10983780 A JP 10983780A JP S5735338 A JPS5735338 A JP S5735338A
Authority
JP
Japan
Prior art keywords
cathode
wirings
cathode electrode
shape
current
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10983780A
Other languages
Japanese (ja)
Inventor
Yoshikazu Hosokawa
Toshikatsu Shirasawa
Kiyoshi Tsukuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP10983780A priority Critical patent/JPS5735338A/en
Publication of JPS5735338A publication Critical patent/JPS5735338A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76297—Dielectric isolation using EPIC techniques, i.e. epitaxial passivated integrated circuit

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
  • Element Separation (AREA)

Abstract

PURPOSE:To reduce the current density of each wiring and obtain high density integration by a method whereincathode wirings are divided and taken out in parallel and crossover of cathode wirings and gate wirings is provided. CONSTITUTION:A plurality of rectangular PB's23 are composed by SiO2 film 19 in an n type semiconductor substrate 21 which is an isolation region from a multi-crystal Si supporting base 20. Inside each PB23, an nE24 is composed in U-shape along its three sides, and a PE22 of a comb-shape is formed. In each region, electrodes of an anode 26, a cathode 27 and a gate 28 are formed through apertures in a surface insulating film 15. The cathode electrode 27 is composed in U-shape on the nE24 in the PB23 and the both ends of the cathode electrode 27 are connected to a lead conductor 30 in parallel, thus the cathode can carry the current 4 times as large as the current carrying capacity of each cathode electrode.
JP10983780A 1980-08-12 1980-08-12 Semiconductor ic device Pending JPS5735338A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10983780A JPS5735338A (en) 1980-08-12 1980-08-12 Semiconductor ic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10983780A JPS5735338A (en) 1980-08-12 1980-08-12 Semiconductor ic device

Publications (1)

Publication Number Publication Date
JPS5735338A true JPS5735338A (en) 1982-02-25

Family

ID=14520455

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10983780A Pending JPS5735338A (en) 1980-08-12 1980-08-12 Semiconductor ic device

Country Status (1)

Country Link
JP (1) JPS5735338A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60146296A (en) * 1984-01-11 1985-08-01 株式会社荏原製作所 Wide band sound absorbing mechanism

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60146296A (en) * 1984-01-11 1985-08-01 株式会社荏原製作所 Wide band sound absorbing mechanism
JPH0476117B2 (en) * 1984-01-11 1992-12-02 Ebara Mfg

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