JPS55108750A - Manufacturing method of semiconductor device - Google Patents

Manufacturing method of semiconductor device

Info

Publication number
JPS55108750A
JPS55108750A JP1559779A JP1559779A JPS55108750A JP S55108750 A JPS55108750 A JP S55108750A JP 1559779 A JP1559779 A JP 1559779A JP 1559779 A JP1559779 A JP 1559779A JP S55108750 A JPS55108750 A JP S55108750A
Authority
JP
Japan
Prior art keywords
etching
layer
semiconductor device
solution
back side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1559779A
Other languages
Japanese (ja)
Inventor
Chiaki Terada
Mikio Takagi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP1559779A priority Critical patent/JPS55108750A/en
Publication of JPS55108750A publication Critical patent/JPS55108750A/en
Pending legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To reduce side etching in the formation of wiring layer of semiconductor device by providing a method in which the electrolytic etching is performed in such a state that the back side of the semiconductor substrate is electrically insulated from the electrolytic solution. CONSTITUTION:An anode constituted by a silicon substrate 11 and a cathod constituted by a platinum plate 12 are placed in an H3PO4 solution 10, and a D.C. voltage of 2-5V is applied between these electrodes. An Al layer 14 covered by a mask of a photoresist 13 is not removed by etching, while exposed Al layer 15 is dissolved and removed by etching. The back side of the silicon substrate 11, as well as both side surfaces of the same, is coated by a silicon oxide film so as to be insulated electrically from the etching solution 10.
JP1559779A 1979-02-13 1979-02-13 Manufacturing method of semiconductor device Pending JPS55108750A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1559779A JPS55108750A (en) 1979-02-13 1979-02-13 Manufacturing method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1559779A JPS55108750A (en) 1979-02-13 1979-02-13 Manufacturing method of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55108750A true JPS55108750A (en) 1980-08-21

Family

ID=11893120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1559779A Pending JPS55108750A (en) 1979-02-13 1979-02-13 Manufacturing method of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55108750A (en)

Similar Documents

Publication Publication Date Title
JPS5710992A (en) Semiconductor device and manufacture therefor
JPS53142196A (en) Bipolar type semiconductor device
JPS55108750A (en) Manufacturing method of semiconductor device
JPS57172765A (en) Electrostatic induction thyristor
JPS5617039A (en) Semiconductor device
JPS5267963A (en) Manufacture of semiconductor unit
JPS5712579A (en) Buried type semiconductor laser
JPS55146967A (en) Semiconductor ic device
JPS5753728A (en) Display device
JPS55138833A (en) Manufacture of semiconductor device
JPS5735338A (en) Semiconductor ic device
JPS533066A (en) Electrode formation method
JPS54157496A (en) Manufacture of tunnel junction
JPS5658279A (en) Panel for solar cell
JPS5269563A (en) Semiconductor device and its manufacturing process
JPS644059A (en) Manufacture of semiconductor integrated circuit device
JPS54113260A (en) Semiconductor device
JPS5268379A (en) Semiconductor device
JPS5348484A (en) Production of semiconductor device
JPS56140644A (en) Semiconductor device and manufacture thereof
JPS57111072A (en) Manufacture of semiconductor device
JPS5610941A (en) Semiconductor device
JPS5258456A (en) Formation of semiconductor pellet
JPS52144288A (en) Preparation of electrode in semiconductor device
JPS57206060A (en) Manufacturing method for semiconductor device

Legal Events

Date Code Title Description
A621 Written request for application examination

Effective date: 20040506

Free format text: JAPANESE INTERMEDIATE CODE: A621

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20050705

A521 Written amendment

Effective date: 20050928

Free format text: JAPANESE INTERMEDIATE CODE: A523

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20060214

A131 Notification of reasons for refusal

Effective date: 20060411

Free format text: JAPANESE INTERMEDIATE CODE: A131

RD05 Notification of revocation of power of attorney

Effective date: 20060627

Free format text: JAPANESE INTERMEDIATE CODE: A7425

A521 Written amendment

Effective date: 20060711

Free format text: JAPANESE INTERMEDIATE CODE: A523

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Effective date: 20060829

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Effective date: 20060921

Free format text: JAPANESE INTERMEDIATE CODE: A61

R150 Certificate of patent (=grant) or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20100929

Year of fee payment: 4

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110929

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20110929

Year of fee payment: 5

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 6

Free format text: PAYMENT UNTIL: 20120929

FPAY Renewal fee payment (prs date is renewal date of database)

Year of fee payment: 7

Free format text: PAYMENT UNTIL: 20130929

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250