JPS56140644A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS56140644A JPS56140644A JP4302280A JP4302280A JPS56140644A JP S56140644 A JPS56140644 A JP S56140644A JP 4302280 A JP4302280 A JP 4302280A JP 4302280 A JP4302280 A JP 4302280A JP S56140644 A JPS56140644 A JP S56140644A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- base
- substrate
- manufacture
- electrodes
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
PURPOSE:To enable a bias to be printed on a substrate simply by forming a connecting layer having the same conductive type as that of an Si substrate and the same degree of a base layer and adopting an absolute separating method. CONSTITUTION:Ions are implanted in the p<-> Si substrate 11, and an n<+> layer 12 and a p<+> layer 13 are formed. An n<-> epitaxial layer 14 is layered and separated by an SiO2 layer 15. Then, a p<+> layer 16 is provided on the p<+> layer 13 when the p<+> base is formed, and the electrical connection from the surface to the base 11 is made possible. Thereafter, an n<+> collector connecting layer 18 and an n<+> emitter 19 are provided, electrodes 20C, 20E, and 20B, a bias applying electrodes 20S, wirings, and an insulating film are formed, and the process is completed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4302280A JPS56140644A (en) | 1980-04-02 | 1980-04-02 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4302280A JPS56140644A (en) | 1980-04-02 | 1980-04-02 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56140644A true JPS56140644A (en) | 1981-11-04 |
Family
ID=12652328
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4302280A Pending JPS56140644A (en) | 1980-04-02 | 1980-04-02 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56140644A (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58102557A (en) * | 1981-12-14 | 1983-06-18 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPS58102540A (en) * | 1981-12-14 | 1983-06-18 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
-
1980
- 1980-04-02 JP JP4302280A patent/JPS56140644A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58102557A (en) * | 1981-12-14 | 1983-06-18 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPS58102540A (en) * | 1981-12-14 | 1983-06-18 | Matsushita Electric Ind Co Ltd | Semiconductor device and manufacture thereof |
JPH0126548B2 (en) * | 1981-12-14 | 1989-05-24 | Matsushita Electric Ind Co Ltd |
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