JPS57134965A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57134965A
JPS57134965A JP56021104A JP2110481A JPS57134965A JP S57134965 A JPS57134965 A JP S57134965A JP 56021104 A JP56021104 A JP 56021104A JP 2110481 A JP2110481 A JP 2110481A JP S57134965 A JPS57134965 A JP S57134965A
Authority
JP
Japan
Prior art keywords
conductive layer
layer
electrodes
conductive
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP56021104A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP56021104A priority Critical patent/JPS57134965A/en
Publication of JPS57134965A publication Critical patent/JPS57134965A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To stabilize the electrical characteristics by a method wherein a conductive layer is formed on Al electrodes via an insulation layer and contact holes are made in the conductive layer and the conductive layer is biased to the specified potential. CONSTITUTION:Al electrodes 8 and 8' are formed on a semiconductor substrate 1 via an insulation layer 2 and a layer 10 at conductive material such as Al, SnO2 or C is formed on the Al electrodes via an SiO2 layer 9. Then an SiO2 layer 11 is formed on the surface of the conductive layer 10 and contact holes are made in the conductive layer 10 and at the same time the surface of the conductive layer inside the contact hole is covered by insulation film and Au electrodes 13 are connected to the pads 12. Then the conductive layer 10 is connected to a certain part of the semiconductor substrate 1, the Al wiring 8 or the taking-out electrode 12. With this constitution, the surface is not charged and the electrical characteristics are improved.
JP56021104A 1981-02-16 1981-02-16 Semiconductor device Pending JPS57134965A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP56021104A JPS57134965A (en) 1981-02-16 1981-02-16 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56021104A JPS57134965A (en) 1981-02-16 1981-02-16 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57134965A true JPS57134965A (en) 1982-08-20

Family

ID=12045558

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56021104A Pending JPS57134965A (en) 1981-02-16 1981-02-16 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57134965A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6020566A (en) * 1983-07-14 1985-02-01 Seiko Epson Corp Semiconductor device
JPS60229369A (en) * 1984-04-27 1985-11-14 Hitachi Ltd Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6020566A (en) * 1983-07-14 1985-02-01 Seiko Epson Corp Semiconductor device
JPS60229369A (en) * 1984-04-27 1985-11-14 Hitachi Ltd Semiconductor device

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