JPS5724563A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5724563A
JPS5724563A JP9953180A JP9953180A JPS5724563A JP S5724563 A JPS5724563 A JP S5724563A JP 9953180 A JP9953180 A JP 9953180A JP 9953180 A JP9953180 A JP 9953180A JP S5724563 A JPS5724563 A JP S5724563A
Authority
JP
Japan
Prior art keywords
resistor
polycrystalline
dielectric strength
metal
mosic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP9953180A
Other languages
Japanese (ja)
Other versions
JPS626673B2 (en
Inventor
Masahide Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP9953180A priority Critical patent/JPS5724563A/en
Publication of JPS5724563A publication Critical patent/JPS5724563A/en
Publication of JPS626673B2 publication Critical patent/JPS626673B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Protection Of Static Devices (AREA)
  • Amplifiers (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the static dielectric strength of an MOSIC, by arranging a metal contacting with the curved or bent part of the protective polycrystalline Si resistor formed on a semiconductor substrate through an insulating film. CONSTITUTION:A polycrystalline Si resistor 3 is formed on an Si substrate on which an MOS type device has been formed, through an insulating film. One end of the resistor 3 is connected to a metal electrode 1 for bonding through a connector 2, while other end is connected to an input protective circuit wiring 6 through a connector 5. Moreover, a metal 11 of Al and the like is contacted with the curved part of the polycrystalline Si resistor 3. Thus, the dielectric strength of the polycrystalline Si resistor itself is made approximately equal to that of a liner polycrystalline Si resistor in level, and the static dielectric strength of the MOSIC is improved without changing the layout and the manufacturing process of the circuit.
JP9953180A 1980-07-21 1980-07-21 Semiconductor device Granted JPS5724563A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9953180A JPS5724563A (en) 1980-07-21 1980-07-21 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9953180A JPS5724563A (en) 1980-07-21 1980-07-21 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5724563A true JPS5724563A (en) 1982-02-09
JPS626673B2 JPS626673B2 (en) 1987-02-12

Family

ID=14249794

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9953180A Granted JPS5724563A (en) 1980-07-21 1980-07-21 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5724563A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0087155A2 (en) * 1982-02-22 1983-08-31 Kabushiki Kaisha Toshiba Means for preventing the breakdown of an insulation layer in semiconductor devices
JPS59105369A (en) * 1982-12-07 1984-06-18 Seiko Epson Corp Semiconductor device
JPS61100969A (en) * 1984-10-22 1986-05-19 Nec Corp Insulated gate protective semiconductor device
US4713680A (en) * 1986-06-30 1987-12-15 Motorola, Inc. Series resistive network
JPH01149451A (en) * 1987-12-04 1989-06-12 Rohm Co Ltd Protective device for cmos input stage gate
JPH0590523A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
JPH0590522A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
JPH0590521A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0087155A2 (en) * 1982-02-22 1983-08-31 Kabushiki Kaisha Toshiba Means for preventing the breakdown of an insulation layer in semiconductor devices
US5113230A (en) * 1982-02-22 1992-05-12 Tokyo Shibaura Denki Kabushi Kaisha Semiconductor device having a conductive layer for preventing insulation layer destruction
JPS59105369A (en) * 1982-12-07 1984-06-18 Seiko Epson Corp Semiconductor device
JPS61100969A (en) * 1984-10-22 1986-05-19 Nec Corp Insulated gate protective semiconductor device
US4713680A (en) * 1986-06-30 1987-12-15 Motorola, Inc. Series resistive network
JPH01149451A (en) * 1987-12-04 1989-06-12 Rohm Co Ltd Protective device for cmos input stage gate
JPH0590523A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
JPH0590522A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device
JPH0590521A (en) * 1992-03-16 1993-04-09 Seiko Epson Corp Semiconductor device

Also Published As

Publication number Publication date
JPS626673B2 (en) 1987-02-12

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