JPS6464361A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6464361A JPS6464361A JP22041987A JP22041987A JPS6464361A JP S6464361 A JPS6464361 A JP S6464361A JP 22041987 A JP22041987 A JP 22041987A JP 22041987 A JP22041987 A JP 22041987A JP S6464361 A JPS6464361 A JP S6464361A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- sheet
- gate electrode
- electrode layer
- prevent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Thyristors (AREA)
Abstract
PURPOSE:To prevent a short circuit by a method wherein a first electrode layer connected to an inside electrode sheet and a second electrode layer not connected to the inside electrode sheet are installed on the main surface and a difference in electrode level is formed between the first electrode layer and the second electrode layer. CONSTITUTION:A first electrode layer connected to an inside electrode sheet is used as a cathode electrode; a second electrode layer not connected to the inside electrode sheet is used as a gate electrode. When the gate electrode 2 and the cathode electrode are installed on the main surface of a semiconductor substrate 1, a thickness of the gate electrode 2 is made thinner than that of the cathode electrode 3. By this setup, it is possible to prevent the gate electrode 2 from coming into contact with an inside electrode sheet 5 directly or indirectly. It is preferable that the gate electrode 2 where a stepped part has been formed is covered completely with an insulating film 7; by this setup, it is possible to prevent the gate electrode 2 from coming into indirect contact with the inside electrode sheet 5 when a foreign substance or the like is penetrated.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22041987A JPS6464361A (en) | 1987-09-04 | 1987-09-04 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP22041987A JPS6464361A (en) | 1987-09-04 | 1987-09-04 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6464361A true JPS6464361A (en) | 1989-03-10 |
Family
ID=16750812
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP22041987A Pending JPS6464361A (en) | 1987-09-04 | 1987-09-04 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6464361A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103094333A (en) * | 2011-11-03 | 2013-05-08 | 杭州汉安半导体有限公司 | High-power thyristor |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5457976A (en) * | 1977-10-18 | 1979-05-10 | Mitsubishi Electric Corp | Thyristor |
-
1987
- 1987-09-04 JP JP22041987A patent/JPS6464361A/en active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5457976A (en) * | 1977-10-18 | 1979-05-10 | Mitsubishi Electric Corp | Thyristor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103094333A (en) * | 2011-11-03 | 2013-05-08 | 杭州汉安半导体有限公司 | High-power thyristor |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0365107A3 (en) | Manufacturing method for vertically conductive semiconductor devices | |
JPS5775463A (en) | Manufacture of semiconductor device | |
JPS6464361A (en) | Semiconductor device | |
JPS6442135A (en) | Semiconductor device | |
JPS5688358A (en) | Manufacture of semiconductor device | |
EP0134692A3 (en) | Multilayer semiconductor devices with embedded conductor structure | |
JPS5769778A (en) | Semiconductor device | |
JPS6468726A (en) | Thin film transistor and its manufacture | |
JPS57104851A (en) | Semiconductor sensor | |
JPS6457671A (en) | Semiconductor device and manufacture thereof | |
JPS56162873A (en) | Insulated gate type field effect semiconductor device | |
JPS5267963A (en) | Manufacture of semiconductor unit | |
JPS56165320A (en) | Formation of multilayer electrodes of semiconductor device | |
JPS57100768A (en) | Manufacture of field effect semiconductor device | |
JPS6439065A (en) | Thin film field-effect transistor | |
JPS57134965A (en) | Semiconductor device | |
JPS6450568A (en) | Semiconductor device | |
JPS6421965A (en) | Mos transistor | |
JPS56165360A (en) | Manufacture of semiconductor device | |
JPS5612769A (en) | Semiconductor device | |
JPS6417475A (en) | Manufacture of mos semiconductor device | |
JPS56120141A (en) | Semiconductor device | |
JPS5739540A (en) | Semiconductor device | |
JPS57160154A (en) | Manufacture of semiconductor device | |
JPS57181142A (en) | Manufacture of semiconductor device |