JPS6464361A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6464361A
JPS6464361A JP22041987A JP22041987A JPS6464361A JP S6464361 A JPS6464361 A JP S6464361A JP 22041987 A JP22041987 A JP 22041987A JP 22041987 A JP22041987 A JP 22041987A JP S6464361 A JPS6464361 A JP S6464361A
Authority
JP
Japan
Prior art keywords
electrode
sheet
gate electrode
electrode layer
prevent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22041987A
Other languages
Japanese (ja)
Inventor
Katsuhiro Endo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP22041987A priority Critical patent/JPS6464361A/en
Publication of JPS6464361A publication Critical patent/JPS6464361A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Thyristors (AREA)

Abstract

PURPOSE:To prevent a short circuit by a method wherein a first electrode layer connected to an inside electrode sheet and a second electrode layer not connected to the inside electrode sheet are installed on the main surface and a difference in electrode level is formed between the first electrode layer and the second electrode layer. CONSTITUTION:A first electrode layer connected to an inside electrode sheet is used as a cathode electrode; a second electrode layer not connected to the inside electrode sheet is used as a gate electrode. When the gate electrode 2 and the cathode electrode are installed on the main surface of a semiconductor substrate 1, a thickness of the gate electrode 2 is made thinner than that of the cathode electrode 3. By this setup, it is possible to prevent the gate electrode 2 from coming into contact with an inside electrode sheet 5 directly or indirectly. It is preferable that the gate electrode 2 where a stepped part has been formed is covered completely with an insulating film 7; by this setup, it is possible to prevent the gate electrode 2 from coming into indirect contact with the inside electrode sheet 5 when a foreign substance or the like is penetrated.
JP22041987A 1987-09-04 1987-09-04 Semiconductor device Pending JPS6464361A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22041987A JPS6464361A (en) 1987-09-04 1987-09-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22041987A JPS6464361A (en) 1987-09-04 1987-09-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6464361A true JPS6464361A (en) 1989-03-10

Family

ID=16750812

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22041987A Pending JPS6464361A (en) 1987-09-04 1987-09-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6464361A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094333A (en) * 2011-11-03 2013-05-08 杭州汉安半导体有限公司 High-power thyristor

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5457976A (en) * 1977-10-18 1979-05-10 Mitsubishi Electric Corp Thyristor

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5457976A (en) * 1977-10-18 1979-05-10 Mitsubishi Electric Corp Thyristor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103094333A (en) * 2011-11-03 2013-05-08 杭州汉安半导体有限公司 High-power thyristor

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