JPS5457976A - Thyristor - Google Patents

Thyristor

Info

Publication number
JPS5457976A
JPS5457976A JP12547877A JP12547877A JPS5457976A JP S5457976 A JPS5457976 A JP S5457976A JP 12547877 A JP12547877 A JP 12547877A JP 12547877 A JP12547877 A JP 12547877A JP S5457976 A JPS5457976 A JP S5457976A
Authority
JP
Japan
Prior art keywords
electrode
cathode
terminal block
areas
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12547877A
Other languages
Japanese (ja)
Inventor
Tatsuo Miyajima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP12547877A priority Critical patent/JPS5457976A/en
Publication of JPS5457976A publication Critical patent/JPS5457976A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H01L29/744—Gate-turn-off devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4824—Pads with extended contours, e.g. grid structure, branch structure, finger structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To obtain a minute-pattern gate electrode and prevent the short-circuit to a terminal block by fixing the one-plate cathode electrode terminal block onto a cathode electrode after covering the upper face of a thyristor element substrate with plural thick cathode electrodes and thin gate electrodes, which are positioned between cathode electrodes, alternately. CONSTITUTION:Plural N-type cathode areas are formed on the upper face of PNP thyristor element substrate 1, and thick cathode electrode 3a consisting of an Al evaporation film is caused to adhere to these areas. Next, gate electrode 2a which is thinner than electrode 3a and consists of the same Al evaporation film as electrode 3a is caused to adhere to the part between cathode areas, and the part between cathode areas are filled up by insulating film 7 such as polymide varnish materials while covering electrode 2a. After that, the difference in height between electrodes 2a and 3a is utilized to fix one-plate Mo cathode electrode terminal block 4a onto electrode 3a while generating space on film 7, and anode electrode terminal block 6 is fitted to the reverse face of substrate 1. Thus, it is unnecessary to provide cut parts in terminal block 4a.
JP12547877A 1977-10-18 1977-10-18 Thyristor Pending JPS5457976A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12547877A JPS5457976A (en) 1977-10-18 1977-10-18 Thyristor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12547877A JPS5457976A (en) 1977-10-18 1977-10-18 Thyristor

Publications (1)

Publication Number Publication Date
JPS5457976A true JPS5457976A (en) 1979-05-10

Family

ID=14911075

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12547877A Pending JPS5457976A (en) 1977-10-18 1977-10-18 Thyristor

Country Status (1)

Country Link
JP (1) JPS5457976A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182820A (en) * 1982-04-21 1983-10-25 Toshiba Corp Preparation of semiconductor device
US4618877A (en) * 1983-12-21 1986-10-21 Kabushiki Kaisha Toshiba Power semiconductor device with mesa type structure
JPS6464361A (en) * 1987-09-04 1989-03-10 Fuji Electric Co Ltd Semiconductor device
US5436502A (en) * 1991-06-24 1995-07-25 Siemens Aktiengesellschaft Semiconductor component and method for the manufacturing thereof
US5661315A (en) * 1995-12-28 1997-08-26 Asea Brown Boveri Ag Controllable power semiconductor component

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58182820A (en) * 1982-04-21 1983-10-25 Toshiba Corp Preparation of semiconductor device
US4618877A (en) * 1983-12-21 1986-10-21 Kabushiki Kaisha Toshiba Power semiconductor device with mesa type structure
JPS6464361A (en) * 1987-09-04 1989-03-10 Fuji Electric Co Ltd Semiconductor device
US5436502A (en) * 1991-06-24 1995-07-25 Siemens Aktiengesellschaft Semiconductor component and method for the manufacturing thereof
US5661315A (en) * 1995-12-28 1997-08-26 Asea Brown Boveri Ag Controllable power semiconductor component

Similar Documents

Publication Publication Date Title
JPS5457976A (en) Thyristor
JPS5228293A (en) Electric colour display unit
JPS5527618A (en) Planar diode
JPS5580352A (en) Transistor with high breakdown voltage
JPS5651863A (en) Gate turn-off thyrister
JPS5267963A (en) Manufacture of semiconductor unit
JPS56103466A (en) Thyristor
JPS52146570A (en) Reverse conducting thyristor
JPS5272188A (en) Gate turn-off thyristor
JPS5239382A (en) Gate control semiconductor element
JPS57196570A (en) Thyristor
JPS5681970A (en) Semiconductor switching device
JPS5374397A (en) Lateral exciting laser oscillator
JPS5494288A (en) 2 terminal reverse conducting thyristor
JPS5440578A (en) Three-terminal thyristor of mold type
JPS5383477A (en) Reverse conducting thyristor
JPS5731173A (en) Semiconductor device
JPS5423375A (en) Manufacture of schottky barrier type electrode
JPS52169A (en) Semiconductor
JPS56101779A (en) Schottky barrier diode
JPS5790976A (en) Thyristor
JPS5640277A (en) Semiconductor device
JPS5519838A (en) Three terminal control commutation element and its producing method
JPS5443482A (en) Junction destruction type programable rom
JPS5278363A (en) Manufacture of in-line type electronic gun