JPS57104851A - Semiconductor sensor - Google Patents

Semiconductor sensor

Info

Publication number
JPS57104851A
JPS57104851A JP55181296A JP18129680A JPS57104851A JP S57104851 A JPS57104851 A JP S57104851A JP 55181296 A JP55181296 A JP 55181296A JP 18129680 A JP18129680 A JP 18129680A JP S57104851 A JPS57104851 A JP S57104851A
Authority
JP
Japan
Prior art keywords
ion
insulating film
gate insulating
ion selective
sensitive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP55181296A
Other languages
Japanese (ja)
Inventor
Yoshitaka Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shindengen Electric Manufacturing Co Ltd
Original Assignee
Shindengen Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shindengen Electric Manufacturing Co Ltd filed Critical Shindengen Electric Manufacturing Co Ltd
Priority to JP55181296A priority Critical patent/JPS57104851A/en
Publication of JPS57104851A publication Critical patent/JPS57104851A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Molecular Biology (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)

Abstract

PURPOSE:To provide a sensor which is compact, uniform in quality, and has a long life, by a method wherein a gate part is formed in a concavity, and a gate insulating film, and an ion selective or non-ion sensitive material are placed in the concavity surface. CONSTITUTION:An n<+> type semiconductor region, consisting of a drain 2 and a source 3, is formed on a p<-> type semiconductor substrate 1. A V-recess 8 is formed in a conductive region between the drain 2 and the source 3 by an etching process. After a gate insulating film 4' is placed in the V-recess 8, an ion selective material or a non-ion sensitive material 19 is applied or dropped to form an ion selective layer or a non-ion sensitive layer 9. The formation of a gate part facilitates coating of the ion selective material or non-ion sensitive material and increases a contact area with the gate insulating film, which results in improving an adhesion strength and lengthening a life.
JP55181296A 1980-12-23 1980-12-23 Semiconductor sensor Pending JPS57104851A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55181296A JPS57104851A (en) 1980-12-23 1980-12-23 Semiconductor sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55181296A JPS57104851A (en) 1980-12-23 1980-12-23 Semiconductor sensor

Publications (1)

Publication Number Publication Date
JPS57104851A true JPS57104851A (en) 1982-06-30

Family

ID=16098193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55181296A Pending JPS57104851A (en) 1980-12-23 1980-12-23 Semiconductor sensor

Country Status (1)

Country Link
JP (1) JPS57104851A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924244A (en) * 1982-08-02 1984-02-07 Hitachi Ltd Field effect transistor type multi-ion sensor and preparation thereof
JPS6029657A (en) * 1983-07-28 1985-02-15 Mitsubishi Electric Corp Glucose sensor
JPS6039547A (en) * 1983-08-12 1985-03-01 Mitsubishi Electric Corp Multi-enzyme sensor
JPS61153559A (en) * 1984-12-27 1986-07-12 Mitsubishi Electric Corp Semiconductor enzyme sensor
WO2004038398A1 (en) * 2002-10-25 2004-05-06 Nikon Corporation Organic molecule detection element and organic molecule detection device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55117955A (en) * 1979-03-05 1980-09-10 Fujitsu Ltd Semiconductor sensor and impurity detection method

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55117955A (en) * 1979-03-05 1980-09-10 Fujitsu Ltd Semiconductor sensor and impurity detection method

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924244A (en) * 1982-08-02 1984-02-07 Hitachi Ltd Field effect transistor type multi-ion sensor and preparation thereof
JPH0358061B2 (en) * 1982-08-02 1991-09-04 Hitachi Ltd
JPS6029657A (en) * 1983-07-28 1985-02-15 Mitsubishi Electric Corp Glucose sensor
JPH0418624B2 (en) * 1983-07-28 1992-03-27 Mitsubishi Electric Corp
JPS6039547A (en) * 1983-08-12 1985-03-01 Mitsubishi Electric Corp Multi-enzyme sensor
JPH0365866B2 (en) * 1983-08-12 1991-10-15
JPS61153559A (en) * 1984-12-27 1986-07-12 Mitsubishi Electric Corp Semiconductor enzyme sensor
JPH055059B2 (en) * 1984-12-27 1993-01-21 Seitai Kino Ryo Kagakuhin Shinseizo Gijutsu Kenkyu Kumiai
WO2004038398A1 (en) * 2002-10-25 2004-05-06 Nikon Corporation Organic molecule detection element and organic molecule detection device

Similar Documents

Publication Publication Date Title
JPS5772384A (en) Manufacture of field-effect transistor
JPS57104851A (en) Semiconductor sensor
JPS56124270A (en) Manufacture of semiconductor device
JPS5664453A (en) Manufacture of semiconductor device
JPS57100768A (en) Manufacture of field effect semiconductor device
JPS5710224A (en) Forming method for silicone single crystalline film
JPS5775460A (en) Manufacture of semiconductor device
JPS5773974A (en) Manufacture of most type semiconductor device
JPS56133872A (en) Manufacture of semiconductor device
JPS56110283A (en) Manufacture of embedded circuit structure-type semiconductor laser device
JPS5766671A (en) Semiconductor device
JPS5772350A (en) Fabrication of semiconductor device
JPS56144553A (en) Manufacture of semiconductor device
JPS5717129A (en) Manufacture of semiconductor device
JPS57104852A (en) Semiconductor sensor
JPS6464361A (en) Semiconductor device
JPS5635421A (en) Manufacture of minute structure
JPS56101745A (en) Formation of microminiature electrode
JPS57193062A (en) Manufacture of semiconductor device
JPS57102047A (en) Manufacture of amorphous semiconductor device
JPS5753981A (en) Manufacture of semiconductor device
JPS56110240A (en) Semiconductor device
JPS5512737A (en) Shot key barrier type semiconductor device
JPS5637671A (en) Semiconductor device
JPS56157064A (en) Manufacture of mis type semiconductor device