JPS56110240A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS56110240A
JPS56110240A JP1335380A JP1335380A JPS56110240A JP S56110240 A JPS56110240 A JP S56110240A JP 1335380 A JP1335380 A JP 1335380A JP 1335380 A JP1335380 A JP 1335380A JP S56110240 A JPS56110240 A JP S56110240A
Authority
JP
Japan
Prior art keywords
film
moisture
coating
proof insulation
phosphor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1335380A
Other languages
Japanese (ja)
Inventor
Kenzo Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1335380A priority Critical patent/JPS56110240A/en
Publication of JPS56110240A publication Critical patent/JPS56110240A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To enhance moisture-proofness and provide a long life by coating a metal film on an opening where a pattern for matching divisions and a scribe line are provided simultaneously and applying a moisture-proof insulation film when metal wiring is formed through an oxidation film and a phosphor silicon acid. CONSTITUTION:A field oxidation film 2, a gate oxidation film 3 and a gate electrode are formed on a silicon substrate 1 having a source drain diffusion layer 5. Then a phosphor silicic glass film is applied on the entier device as a coating. Next, when a contact is opened and an Al metal wiring 7 is formed, a metal film 8, 9 is deposited on a region 11, 12 where a pattern for matching divisions or a scribe line is to be formed later by opening a hole in a moisture-proof insulation film 10, so that a phosphor silicic acid glass is prevented from being exposed. Following this process, a moisture-proof insulation film such as a nitrided silicon, etc. is applied as a coating on the entire surface to provide required openings 11, 12. Under this constitution, it is possible to enhance moisture proofness and prolong the life of an element.
JP1335380A 1980-02-06 1980-02-06 Semiconductor device Pending JPS56110240A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1335380A JPS56110240A (en) 1980-02-06 1980-02-06 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1335380A JPS56110240A (en) 1980-02-06 1980-02-06 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS56110240A true JPS56110240A (en) 1981-09-01

Family

ID=11830732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1335380A Pending JPS56110240A (en) 1980-02-06 1980-02-06 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS56110240A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352383A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Electrode formation method
JPS5459889A (en) * 1977-10-21 1979-05-14 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5352383A (en) * 1976-10-25 1978-05-12 Hitachi Ltd Electrode formation method
JPS5459889A (en) * 1977-10-21 1979-05-14 Hitachi Ltd Semiconductor device

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