JPS5571043A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5571043A
JPS5571043A JP14420178A JP14420178A JPS5571043A JP S5571043 A JPS5571043 A JP S5571043A JP 14420178 A JP14420178 A JP 14420178A JP 14420178 A JP14420178 A JP 14420178A JP S5571043 A JPS5571043 A JP S5571043A
Authority
JP
Japan
Prior art keywords
coating film
stem
insulating coating
metallic substrate
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14420178A
Other languages
Japanese (ja)
Inventor
Nobuo Otani
Fuyuhiko Murofushi
Koji Takebe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP14420178A priority Critical patent/JPS5571043A/en
Publication of JPS5571043A publication Critical patent/JPS5571043A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To simplify working process and to curtail cost by a method wherein an insulating coating film is formed at least on one principal face of a metallic substrate and inside of a lead hole, and a stem is fixed on the metallic substrate by way of the coating film for combination of a semiconductor device with a radiation substrate.
CONSTITUTION: An insulating coating film 11 60μm thick for example is formed on one principal face of a plank zone 5 of a radiation metallic substrate and inside of a lead hole by applying polyimide-isoindolo-quinazolinedione resin in paste. Then at the time of assembling transistor, a mica plate is disused, a stem of the transistor is placed directly on the surface of the radiation metallic substrate whereat the insulating coating film 11 is formed, and the stem lead is inserted in a lead hole to assembling. In this case, the surface of the insulating coating film 11 or the lower surface of the transistor stem is greased and clamped with screws.
COPYRIGHT: (C)1980,JPO&Japio
JP14420178A 1978-11-24 1978-11-24 Semiconductor device Pending JPS5571043A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14420178A JPS5571043A (en) 1978-11-24 1978-11-24 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14420178A JPS5571043A (en) 1978-11-24 1978-11-24 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5571043A true JPS5571043A (en) 1980-05-28

Family

ID=15356562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14420178A Pending JPS5571043A (en) 1978-11-24 1978-11-24 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5571043A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140189A (en) * 1982-02-15 1983-08-19 三菱電機株式会社 Heat sink
JP2010067924A (en) * 2008-09-12 2010-03-25 Hitachi Koki Co Ltd Semiconductor device and battery charger

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58140189A (en) * 1982-02-15 1983-08-19 三菱電機株式会社 Heat sink
JP2010067924A (en) * 2008-09-12 2010-03-25 Hitachi Koki Co Ltd Semiconductor device and battery charger

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