JPS56116641A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS56116641A JPS56116641A JP2000480A JP2000480A JPS56116641A JP S56116641 A JPS56116641 A JP S56116641A JP 2000480 A JP2000480 A JP 2000480A JP 2000480 A JP2000480 A JP 2000480A JP S56116641 A JPS56116641 A JP S56116641A
- Authority
- JP
- Japan
- Prior art keywords
- providing
- membrane
- glass
- wiring
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To prevent breakage of wiring, by providing an opening of a glass membrane with an insulating membrane having a good affinity with glass and then providing it with glass flow. CONSTITUTION:After forming a prescribed dispersion layer on an Si substrate and providing it with an electrode window, a PSG 8 which has the same chemical composition as a covered PSG7 is laminated for insulation. When glass flow is provided as the thin membrane of PSG8 is formed on surface of Si in the electrode window area, the window is allowed to form smooth shapes of B and C by surface tensions of the thick membrane 7 and the thin membrane 8. By providing an Al wiring 9 with an opening, the wiring becomes able to be prevented from breakage.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000480A JPS56116641A (en) | 1980-02-20 | 1980-02-20 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2000480A JPS56116641A (en) | 1980-02-20 | 1980-02-20 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56116641A true JPS56116641A (en) | 1981-09-12 |
Family
ID=12014985
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2000480A Pending JPS56116641A (en) | 1980-02-20 | 1980-02-20 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56116641A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02125449A (en) * | 1988-06-29 | 1990-05-14 | Matsushita Electron Corp | Manufacture of semiconductor device |
US5399532A (en) * | 1991-05-30 | 1995-03-21 | At&T Corp. | Integrated circuit window etch and planarization |
US5552342A (en) * | 1993-08-20 | 1996-09-03 | Nippondenso Co., Ltd. | Method for producing a contact hole in a semiconductor device using reflow and etch |
-
1980
- 1980-02-20 JP JP2000480A patent/JPS56116641A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02125449A (en) * | 1988-06-29 | 1990-05-14 | Matsushita Electron Corp | Manufacture of semiconductor device |
US5399532A (en) * | 1991-05-30 | 1995-03-21 | At&T Corp. | Integrated circuit window etch and planarization |
US5552342A (en) * | 1993-08-20 | 1996-09-03 | Nippondenso Co., Ltd. | Method for producing a contact hole in a semiconductor device using reflow and etch |
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