JPS56116641A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS56116641A
JPS56116641A JP2000480A JP2000480A JPS56116641A JP S56116641 A JPS56116641 A JP S56116641A JP 2000480 A JP2000480 A JP 2000480A JP 2000480 A JP2000480 A JP 2000480A JP S56116641 A JPS56116641 A JP S56116641A
Authority
JP
Grant status
Application
Patent type
Prior art keywords
providing
membrane
glass
wiring
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000480A
Inventor
Atsushi Nakano
Shinpei Tanaka
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step

Abstract

PURPOSE:To prevent breakage of wiring, by providing an opening of a glass membrane with an insulating membrane having a good affinity with glass and then providing it with glass flow. CONSTITUTION:After forming a prescribed dispersion layer on an Si substrate and providing it with an electrode window, a PSG 8 which has the same chemical composition as a covered PSG7 is laminated for insulation. When glass flow is provided as the thin membrane of PSG8 is formed on surface of Si in the electrode window area, the window is allowed to form smooth shapes of B and C by surface tensions of the thick membrane 7 and the thin membrane 8. By providing an Al wiring 9 with an opening, the wiring becomes able to be prevented from breakage.
JP2000480A 1980-02-20 1980-02-20 Manufacture of semiconductor device Pending JPS56116641A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2000480A JPS56116641A (en) 1980-02-20 1980-02-20 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000480A JPS56116641A (en) 1980-02-20 1980-02-20 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS56116641A true true JPS56116641A (en) 1981-09-12

Family

ID=12014985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000480A Pending JPS56116641A (en) 1980-02-20 1980-02-20 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56116641A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02125449A (en) * 1988-06-29 1990-05-14 Matsushita Electron Corp Manufacture of semiconductor device
US5399532A (en) * 1991-05-30 1995-03-21 At&T Corp. Integrated circuit window etch and planarization
US5552342A (en) * 1993-08-20 1996-09-03 Nippondenso Co., Ltd. Method for producing a contact hole in a semiconductor device using reflow and etch

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02125449A (en) * 1988-06-29 1990-05-14 Matsushita Electron Corp Manufacture of semiconductor device
US5399532A (en) * 1991-05-30 1995-03-21 At&T Corp. Integrated circuit window etch and planarization
US5552342A (en) * 1993-08-20 1996-09-03 Nippondenso Co., Ltd. Method for producing a contact hole in a semiconductor device using reflow and etch

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