JPS5743432A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5743432A
JPS5743432A JP11840980A JP11840980A JPS5743432A JP S5743432 A JPS5743432 A JP S5743432A JP 11840980 A JP11840980 A JP 11840980A JP 11840980 A JP11840980 A JP 11840980A JP S5743432 A JPS5743432 A JP S5743432A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
moisture
protect
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11840980A
Other languages
Japanese (ja)
Inventor
Daijiro Kudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11840980A priority Critical patent/JPS5743432A/en
Publication of JPS5743432A publication Critical patent/JPS5743432A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3192—Multilayer coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To protect a semiconductor device completely from moisture by covering the atmosphere exposed part of a phosphorus silicate glass film formed on the substrate of the device. CONSTITUTION:A silicon oxidized film 2 and an aluminum electrode 3 are formed on a silicon substrate 1, and a phosphorus silicate film 4 is formed on the electrode except an electrode window 6 for insulation. Further, a moisture preventive film 5 including the side A is covered further on the film 4 to protect the film 4. Since phosphorus content contained in the film is in large quantity, the atmosphere exposed entire part of the film 4 having high hygroscopicity is thus covered with the moisture preventive film, thereby obtaining a semiconductor device having excellent durability time.
JP11840980A 1980-08-29 1980-08-29 Semiconductor device Pending JPS5743432A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11840980A JPS5743432A (en) 1980-08-29 1980-08-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11840980A JPS5743432A (en) 1980-08-29 1980-08-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5743432A true JPS5743432A (en) 1982-03-11

Family

ID=14735926

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11840980A Pending JPS5743432A (en) 1980-08-29 1980-08-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5743432A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63173332A (en) * 1987-01-12 1988-07-16 Nec Corp Semiconductor integrated circuit device
JPH02141737A (en) * 1988-11-24 1990-05-31 Canon Inc Rear projection type screen and rear projection type image display device using it
EP4016606A1 (en) * 2020-12-16 2022-06-22 STMicroelectronics Pte Ltd. Passivation layer for an integrated circuit device that provides a moisture and proton barrier

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63173332A (en) * 1987-01-12 1988-07-16 Nec Corp Semiconductor integrated circuit device
JPH02141737A (en) * 1988-11-24 1990-05-31 Canon Inc Rear projection type screen and rear projection type image display device using it
EP4016606A1 (en) * 2020-12-16 2022-06-22 STMicroelectronics Pte Ltd. Passivation layer for an integrated circuit device that provides a moisture and proton barrier

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