JPS56137675A - Semiconductor device and manufacture thereof - Google Patents

Semiconductor device and manufacture thereof

Info

Publication number
JPS56137675A
JPS56137675A JP4051880A JP4051880A JPS56137675A JP S56137675 A JPS56137675 A JP S56137675A JP 4051880 A JP4051880 A JP 4051880A JP 4051880 A JP4051880 A JP 4051880A JP S56137675 A JPS56137675 A JP S56137675A
Authority
JP
Japan
Prior art keywords
film
gate
wiring
semiconductor
polycrystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4051880A
Other languages
Japanese (ja)
Inventor
Shinji Shimizu
Osamu Kasahara
Takashi Ishikawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP4051880A priority Critical patent/JPS56137675A/en
Publication of JPS56137675A publication Critical patent/JPS56137675A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
    • H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
    • H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To enable preparation of a microscopic structure and thereby prevent metallic pollution of a semiconductor and an insulation film by a method wherein the front and lateral surfaces of a semiconductor film formed to serve as a gate electrode or a wiring are covered with the compound of the semiconductor film with metal of high melting point. CONSTITUTION:A field SiO2 film 2 and an SiO2 film 3 for a gate are formed on the surface of an Si substrate 1, and an Si gate 4 and an Si wiring 5 formed of electroconductive polycrystalline Si on the film 3 and film 2, respectively. Next, a Pt film 6 is formed on the whole surface, heat treatment is applied thereto, Pt and Si in the surface of the polycrystalline Si are alloyed and thereby a Pt-Si film 7 is formed. When the Pt film is etched off by Pt-etching liquid thereafter, the film 7 is not etched but turned into the state that it covers the upper and lateral surfaces of the gate 4 and wiring 5. Since the surfaces of the Si and Si gate wining are covered with the Pt-Si film of low resistance in this way, the sheet resistance of the gate and wiring turns low, whereby the microscopic structure is made possible to prepare. Furthermore, metallic pollution is prevented by the Pt-Si film, and thus the stability of characteristic can be maintained.
JP4051880A 1980-03-31 1980-03-31 Semiconductor device and manufacture thereof Pending JPS56137675A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4051880A JPS56137675A (en) 1980-03-31 1980-03-31 Semiconductor device and manufacture thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4051880A JPS56137675A (en) 1980-03-31 1980-03-31 Semiconductor device and manufacture thereof

Publications (1)

Publication Number Publication Date
JPS56137675A true JPS56137675A (en) 1981-10-27

Family

ID=12582728

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4051880A Pending JPS56137675A (en) 1980-03-31 1980-03-31 Semiconductor device and manufacture thereof

Country Status (1)

Country Link
JP (1) JPS56137675A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161344A (en) * 1982-03-19 1983-09-24 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPS60117766A (en) * 1983-11-30 1985-06-25 Nec Corp Semiconductor device
JPS61206250A (en) * 1985-03-08 1986-09-12 Toshiba Corp Semiconductor integrated circuit device
JPS62128546A (en) * 1985-11-29 1987-06-10 Mitsubishi Electric Corp Semiconductor integrated circuit device and manufacture thereof
JPS62283667A (en) * 1986-05-31 1987-12-09 Toshiba Corp Manufacture of semiconductor device
JPH0536982A (en) * 1991-07-29 1993-02-12 Sanyo Electric Co Ltd Structure and manufacturing of mosfet
JPH05503189A (en) * 1989-10-10 1993-05-27 ブイエルエスアイ　テクノロジー　インコーポレイテッド Manufacturing self-aligning metal interconnects

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
1BM TECHN1CALD1SCLOSURE BULLET1N *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58161344A (en) * 1982-03-19 1983-09-24 Oki Electric Ind Co Ltd Manufacture of semiconductor device
JPH041497B2 (en) * 1982-03-19 1992-01-13 Oki Electric Ind Co Ltd
JPS60117766A (en) * 1983-11-30 1985-06-25 Nec Corp Semiconductor device
JPH0239868B2 (en) * 1983-11-30 1990-09-07 Nippon Electric Co
JPS61206250A (en) * 1985-03-08 1986-09-12 Toshiba Corp Semiconductor integrated circuit device
JPH0350422B2 (en) * 1985-03-08 1991-08-01 Tokyo Shibaura Electric Co
JPS62128546A (en) * 1985-11-29 1987-06-10 Mitsubishi Electric Corp Semiconductor integrated circuit device and manufacture thereof
JPS62283667A (en) * 1986-05-31 1987-12-09 Toshiba Corp Manufacture of semiconductor device
JPH05503189A (en) * 1989-10-10 1993-05-27 ブイエルエスアイ　テクノロジー　インコーポレイテッド Manufacturing self-aligning metal interconnects
JPH0536982A (en) * 1991-07-29 1993-02-12 Sanyo Electric Co Ltd Structure and manufacturing of mosfet

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