JPS56137675A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS56137675A JPS56137675A JP4051880A JP4051880A JPS56137675A JP S56137675 A JPS56137675 A JP S56137675A JP 4051880 A JP4051880 A JP 4051880A JP 4051880 A JP4051880 A JP 4051880A JP S56137675 A JPS56137675 A JP S56137675A
- Authority
- JP
- Japan
- Prior art keywords
- film
- gate
- wiring
- semiconductor
- polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 4
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 2
- 229910052906 cristobalite Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 239000000377 silicon dioxide Substances 0.000 abstract 2
- 235000012239 silicon dioxide Nutrition 0.000 abstract 2
- 229910052682 stishovite Inorganic materials 0.000 abstract 2
- 229910052905 tridymite Inorganic materials 0.000 abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 239000007788 liquid Substances 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 238000002360 preparation method Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To enable preparation of a microscopic structure and thereby prevent metallic pollution of a semiconductor and an insulation film by a method wherein the front and lateral surfaces of a semiconductor film formed to serve as a gate electrode or a wiring are covered with the compound of the semiconductor film with metal of high melting point. CONSTITUTION:A field SiO2 film 2 and an SiO2 film 3 for a gate are formed on the surface of an Si substrate 1, and an Si gate 4 and an Si wiring 5 formed of electroconductive polycrystalline Si on the film 3 and film 2, respectively. Next, a Pt film 6 is formed on the whole surface, heat treatment is applied thereto, Pt and Si in the surface of the polycrystalline Si are alloyed and thereby a Pt-Si film 7 is formed. When the Pt film is etched off by Pt-etching liquid thereafter, the film 7 is not etched but turned into the state that it covers the upper and lateral surfaces of the gate 4 and wiring 5. Since the surfaces of the Si and Si gate wining are covered with the Pt-Si film of low resistance in this way, the sheet resistance of the gate and wiring turns low, whereby the microscopic structure is made possible to prepare. Furthermore, metallic pollution is prevented by the Pt-Si film, and thus the stability of characteristic can be maintained.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4051880A JPS56137675A (en) | 1980-03-31 | 1980-03-31 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4051880A JPS56137675A (en) | 1980-03-31 | 1980-03-31 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS56137675A true JPS56137675A (en) | 1981-10-27 |
Family
ID=12582728
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4051880A Pending JPS56137675A (en) | 1980-03-31 | 1980-03-31 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS56137675A (en) |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58161344A (en) * | 1982-03-19 | 1983-09-24 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPS60117766A (en) * | 1983-11-30 | 1985-06-25 | Nec Corp | Semiconductor device |
JPS61206250A (en) * | 1985-03-08 | 1986-09-12 | Toshiba Corp | Semiconductor integrated circuit device |
JPS62128546A (en) * | 1985-11-29 | 1987-06-10 | Mitsubishi Electric Corp | Semiconductor integrated circuit device and manufacture thereof |
JPS62283667A (en) * | 1986-05-31 | 1987-12-09 | Toshiba Corp | Manufacture of semiconductor device |
JPH0536982A (en) * | 1991-07-29 | 1993-02-12 | Sanyo Electric Co Ltd | Structure and manufacturing of mosfet |
JPH05503189A (en) * | 1989-10-10 | 1993-05-27 | ブイエルエスアイ テクノロジー インコーポレイテッド | Manufacturing self-aligning metal interconnects |
-
1980
- 1980-03-31 JP JP4051880A patent/JPS56137675A/en active Pending
Non-Patent Citations (1)
Title |
---|
1BM TECHN1CALD1SCLOSURE BULLET1N * |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS58161344A (en) * | 1982-03-19 | 1983-09-24 | Oki Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH041497B2 (en) * | 1982-03-19 | 1992-01-13 | Oki Electric Ind Co Ltd | |
JPS60117766A (en) * | 1983-11-30 | 1985-06-25 | Nec Corp | Semiconductor device |
JPH0239868B2 (en) * | 1983-11-30 | 1990-09-07 | Nippon Electric Co | |
JPS61206250A (en) * | 1985-03-08 | 1986-09-12 | Toshiba Corp | Semiconductor integrated circuit device |
JPH0350422B2 (en) * | 1985-03-08 | 1991-08-01 | Tokyo Shibaura Electric Co | |
JPS62128546A (en) * | 1985-11-29 | 1987-06-10 | Mitsubishi Electric Corp | Semiconductor integrated circuit device and manufacture thereof |
JPS62283667A (en) * | 1986-05-31 | 1987-12-09 | Toshiba Corp | Manufacture of semiconductor device |
JPH05503189A (en) * | 1989-10-10 | 1993-05-27 | ブイエルエスアイ テクノロジー インコーポレイテッド | Manufacturing self-aligning metal interconnects |
JPH0536982A (en) * | 1991-07-29 | 1993-02-12 | Sanyo Electric Co Ltd | Structure and manufacturing of mosfet |
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