JPS57172763A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS57172763A JPS57172763A JP4979782A JP4979782A JPS57172763A JP S57172763 A JPS57172763 A JP S57172763A JP 4979782 A JP4979782 A JP 4979782A JP 4979782 A JP4979782 A JP 4979782A JP S57172763 A JPS57172763 A JP S57172763A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- diffused
- oxide film
- deposited
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000002184 metal Substances 0.000 abstract 5
- 239000000758 substrate Substances 0.000 abstract 4
- 238000009792 diffusion process Methods 0.000 abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/45—Ohmic electrodes
- H01L29/456—Ohmic electrodes on silicon
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To avoid the diffusion of electrode metal into a substrate at the time of heat treatment, when a polycrystalline Si layer is contacted with a diffused region formed on a semiconductor substrate through an oxide film having a hole and the metal electrode is deposited on the Si layer, by not providing the metal electrode directly over the diffused region but forming it at the part separated from said region. CONSTITUTION:An oxide film 2 is selectively provided on an Si substrate 1, an impurity diffused layer 3 is formed in the substrate 1 using a window and an oxide film 4 is deposited on the entire oxide film 4. Then a window is perforated in the film 4 at the position corresponding to the central part of the diffused layer 3. The polycrystalline Si layer 5 is deposited so that it is contacted with the diffused layer 3. The impurities having the same conductive type as the diffused layer 3 is diffused and the resistance of the Si layer 5 is reduced. Thereafter the surface is coated by an oxide film 6, and a window is provided. When the metal electrode 7 which is contacted with the Si layer 5 is deposited, it is not placed over the diffused layer 3 but at the part separated from the layee 3. Thus the diffusion of the electrode metal to the semiconductor layer can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4979782A JPS57172763A (en) | 1982-03-27 | 1982-03-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4979782A JPS57172763A (en) | 1982-03-27 | 1982-03-27 | Semiconductor device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8629072A Division JPS4943574A (en) | 1972-08-30 | 1972-08-30 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5324484A Division JPS59229866A (en) | 1984-03-19 | 1984-03-19 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS57172763A true JPS57172763A (en) | 1982-10-23 |
Family
ID=12841133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4979782A Pending JPS57172763A (en) | 1982-03-27 | 1982-03-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57172763A (en) |
-
1982
- 1982-03-27 JP JP4979782A patent/JPS57172763A/en active Pending
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