JPS5633853A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5633853A
JPS5633853A JP10995679A JP10995679A JPS5633853A JP S5633853 A JPS5633853 A JP S5633853A JP 10995679 A JP10995679 A JP 10995679A JP 10995679 A JP10995679 A JP 10995679A JP S5633853 A JPS5633853 A JP S5633853A
Authority
JP
Japan
Prior art keywords
insulating film
polycrystalline silicon
melting
semiconductor device
cut
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10995679A
Other languages
Japanese (ja)
Other versions
JPS6350857B2 (en
Inventor
Masahide Ozawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP10995679A priority Critical patent/JPS5633853A/en
Publication of JPS5633853A publication Critical patent/JPS5633853A/en
Publication of JPS6350857B2 publication Critical patent/JPS6350857B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To elevate the reliability and to attain the high precision of the semiconductor device by a method wherein the form of a poly-crystalline silicon resistor or a fuse is made to be L-shape, and especially the polycrystalline silicon thermal oxidation film on the bent part is removed. CONSTITUTION:The L-shaped polycrystalline silicon thermal oxidation film 12 formed on an insulating film 14 on the main face of a semiconductor substrate 15 is removed, and is covered only with an insulating film 13 formed by vapor growth. Therefore as the part to be cut by melting is limited only to a bent part 6, the polycrystalline silicon can be cut by melting without damaging the insulating film cover 12 to prevent the reduction of reliability caused by an injury in the insulating film cover.
JP10995679A 1979-08-28 1979-08-28 Semiconductor device Granted JPS5633853A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10995679A JPS5633853A (en) 1979-08-28 1979-08-28 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10995679A JPS5633853A (en) 1979-08-28 1979-08-28 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5633853A true JPS5633853A (en) 1981-04-04
JPS6350857B2 JPS6350857B2 (en) 1988-10-12

Family

ID=14523388

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10995679A Granted JPS5633853A (en) 1979-08-28 1979-08-28 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5633853A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57120362A (en) * 1981-01-17 1982-07-27 Toshiba Corp Semiconductor fuse
JPS58123759A (en) * 1982-01-18 1983-07-23 Fujitsu Ltd Semiconductor memory storage
WO2004102664A1 (en) * 2003-05-13 2004-11-25 Fujitsu Limited Fuse circuit and semiconductor integrated circuit device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57120362A (en) * 1981-01-17 1982-07-27 Toshiba Corp Semiconductor fuse
JPS58123759A (en) * 1982-01-18 1983-07-23 Fujitsu Ltd Semiconductor memory storage
JPH0343788B2 (en) * 1982-01-18 1991-07-03 Fujitsu Ltd
WO2004102664A1 (en) * 2003-05-13 2004-11-25 Fujitsu Limited Fuse circuit and semiconductor integrated circuit device
US7158435B2 (en) 2003-05-13 2007-01-02 Fujitsu Limited Fuse circuit and semiconductor integrated circuit device

Also Published As

Publication number Publication date
JPS6350857B2 (en) 1988-10-12

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