JPS5795661A - Thin film semiconductor device - Google Patents

Thin film semiconductor device

Info

Publication number
JPS5795661A
JPS5795661A JP17113680A JP17113680A JPS5795661A JP S5795661 A JPS5795661 A JP S5795661A JP 17113680 A JP17113680 A JP 17113680A JP 17113680 A JP17113680 A JP 17113680A JP S5795661 A JPS5795661 A JP S5795661A
Authority
JP
Japan
Prior art keywords
thin film
substrate
semiconductor device
film semiconductor
damage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17113680A
Other languages
Japanese (ja)
Inventor
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP17113680A priority Critical patent/JPS5795661A/en
Publication of JPS5795661A publication Critical patent/JPS5795661A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body

Abstract

PURPOSE:To obtain a thin film semiconductor having no damage on a substrate by mounting a semiconductor layer having an active layer after coverting it with an insulated Al film formed on the substrate. CONSTITUTION:When a semiconductor device of thin film is formed on a substrate made of plastic material, etc., a single crystalizing process is provided by a laser annealing for a semiconductor layer. At this time, a part of the leser rays sometimes gives the damage due to heating. According to such the constitution, since the laser rays are reflected by Al film 2 formed on a substrate 1, the substrate is protected from a thermal damage and consequently a thin film semiconductor device having a high density can be formed.
JP17113680A 1980-12-04 1980-12-04 Thin film semiconductor device Pending JPS5795661A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17113680A JPS5795661A (en) 1980-12-04 1980-12-04 Thin film semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17113680A JPS5795661A (en) 1980-12-04 1980-12-04 Thin film semiconductor device

Publications (1)

Publication Number Publication Date
JPS5795661A true JPS5795661A (en) 1982-06-14

Family

ID=15917646

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17113680A Pending JPS5795661A (en) 1980-12-04 1980-12-04 Thin film semiconductor device

Country Status (1)

Country Link
JP (1) JPS5795661A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954267A (en) * 1982-09-21 1984-03-29 Seiko Epson Corp Semiconductor device
JPS6074463A (en) * 1983-09-29 1985-04-26 Fujitsu Ltd Trimming method for resistance film
US5196912A (en) * 1988-10-28 1993-03-23 Casio Computer Co., Ltd. Thin film transistor having memory function and method for using thin film transistor as memory element
JPH08213324A (en) * 1995-10-30 1996-08-20 Toshiba Corp Semiconductor device
KR100286464B1 (en) * 1997-03-25 2001-05-02 포만 제프리 엘 Thin Film Transistors Fabricated on Plastic Substrates

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126956A (en) * 1980-03-11 1981-10-05 Fujitsu Ltd Semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126956A (en) * 1980-03-11 1981-10-05 Fujitsu Ltd Semiconductor device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5954267A (en) * 1982-09-21 1984-03-29 Seiko Epson Corp Semiconductor device
JPH0542816B2 (en) * 1982-09-21 1993-06-29 Seiko Epson Corp
JPS6074463A (en) * 1983-09-29 1985-04-26 Fujitsu Ltd Trimming method for resistance film
US5196912A (en) * 1988-10-28 1993-03-23 Casio Computer Co., Ltd. Thin film transistor having memory function and method for using thin film transistor as memory element
JPH08213324A (en) * 1995-10-30 1996-08-20 Toshiba Corp Semiconductor device
KR100286464B1 (en) * 1997-03-25 2001-05-02 포만 제프리 엘 Thin Film Transistors Fabricated on Plastic Substrates

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