JPS6473745A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS6473745A JPS6473745A JP23182187A JP23182187A JPS6473745A JP S6473745 A JPS6473745 A JP S6473745A JP 23182187 A JP23182187 A JP 23182187A JP 23182187 A JP23182187 A JP 23182187A JP S6473745 A JPS6473745 A JP S6473745A
- Authority
- JP
- Japan
- Prior art keywords
- interconnection
- film
- high temperature
- semiconductor device
- high melting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE:To protect a lower metal interconnection against a thermal shock by a method wherein a high melting metal film is formed on the lower metal interconnection. CONSTITUTION:An interlaminar insulating film 12 is formed on a semiconductor substrate 11. Next, an Al interconnection 13 is formed on the film 12. Then, a high melting metal film 14 is formed so as to prevent the interconnection 13 from being heated it high temperature. An interlaminar insulating film 15 is formed on the film 14. An Al interconnection 16 is built on the film 15. A high melting metal film 17 is formed on the interconnection 16 to prevent it from being heated at a high temperature. The semiconductor provided with a multilayer interconnection is formed in the processes as mentioned above. By these processes, a lower Al interconnection can be protected against a thermal shock. And a sputtering method performed at a high temperature can be applied, so that a multilayer interconnection used for a power source or the like of a semiconductor device high in integration and density and large in scale can be formed into a required shape.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23182187A JPS6473745A (en) | 1987-09-16 | 1987-09-16 | Semiconductor device and manufacture thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23182187A JPS6473745A (en) | 1987-09-16 | 1987-09-16 | Semiconductor device and manufacture thereof |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6473745A true JPS6473745A (en) | 1989-03-20 |
Family
ID=16929546
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP23182187A Pending JPS6473745A (en) | 1987-09-16 | 1987-09-16 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6473745A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0235753A (en) * | 1988-07-26 | 1990-02-06 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH04264729A (en) * | 1990-10-25 | 1992-09-21 | Hyundai Electron Ind Co Ltd | Flattening and formation method of metal thin film |
JPH06318590A (en) * | 1993-05-10 | 1994-11-15 | Nec Corp | Manufacture of semiconductor device |
-
1987
- 1987-09-16 JP JP23182187A patent/JPS6473745A/en active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0235753A (en) * | 1988-07-26 | 1990-02-06 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
JPH04264729A (en) * | 1990-10-25 | 1992-09-21 | Hyundai Electron Ind Co Ltd | Flattening and formation method of metal thin film |
JPH06318590A (en) * | 1993-05-10 | 1994-11-15 | Nec Corp | Manufacture of semiconductor device |
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