JPS5621336A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5621336A JPS5621336A JP9712879A JP9712879A JPS5621336A JP S5621336 A JPS5621336 A JP S5621336A JP 9712879 A JP9712879 A JP 9712879A JP 9712879 A JP9712879 A JP 9712879A JP S5621336 A JPS5621336 A JP S5621336A
- Authority
- JP
- Japan
- Prior art keywords
- film
- etched
- sio
- substrate
- thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To make the surface protective oxidie film of uniform thickness, by utilizing selective heating with laser to grow an insulating film of desired thickness.
CONSTITUTION: Etching is effected into an Si substrate 1 uniformly coated with an oxide film 3a and a nitride film. Boron ions are then injected into the etched part of the substrate 1 to produce a P+ impurity layer 6 just under the etched part 7. Laser light is irradiated upon the part 7 under an atmosphere of steam to heat the part. At that time, a metal mask 10 of shape coincident with that of the etched opening is provided to protect the other portions except for the part 7 from the laser light. As a result, SiO2 is grown from the etched part 7 in the etched opening as shown by an arrow (W) so that the top of the SiO2 has the same level as that of the film 3a. The films 3a, 4 are removed to provide the SiO2 as an element separation zone 2. According to this method, the thickness of an oxide film 12 generated on an Si surface does not become nonuniform.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9712879A JPS5621336A (en) | 1979-07-30 | 1979-07-30 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9712879A JPS5621336A (en) | 1979-07-30 | 1979-07-30 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5621336A true JPS5621336A (en) | 1981-02-27 |
Family
ID=14183918
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9712879A Pending JPS5621336A (en) | 1979-07-30 | 1979-07-30 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5621336A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57131362U (en) * | 1981-02-12 | 1982-08-16 |
-
1979
- 1979-07-30 JP JP9712879A patent/JPS5621336A/en active Pending
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57131362U (en) * | 1981-02-12 | 1982-08-16 | ||
JPS6234851Y2 (en) * | 1981-02-12 | 1987-09-04 |
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