JPS5621336A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS5621336A
JPS5621336A JP9712879A JP9712879A JPS5621336A JP S5621336 A JPS5621336 A JP S5621336A JP 9712879 A JP9712879 A JP 9712879A JP 9712879 A JP9712879 A JP 9712879A JP S5621336 A JPS5621336 A JP S5621336A
Authority
JP
Japan
Prior art keywords
film
etched
sio
substrate
thickness
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9712879A
Other languages
Japanese (ja)
Inventor
Hiroo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP9712879A priority Critical patent/JPS5621336A/en
Publication of JPS5621336A publication Critical patent/JPS5621336A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To make the surface protective oxidie film of uniform thickness, by utilizing selective heating with laser to grow an insulating film of desired thickness.
CONSTITUTION: Etching is effected into an Si substrate 1 uniformly coated with an oxide film 3a and a nitride film. Boron ions are then injected into the etched part of the substrate 1 to produce a P+ impurity layer 6 just under the etched part 7. Laser light is irradiated upon the part 7 under an atmosphere of steam to heat the part. At that time, a metal mask 10 of shape coincident with that of the etched opening is provided to protect the other portions except for the part 7 from the laser light. As a result, SiO2 is grown from the etched part 7 in the etched opening as shown by an arrow (W) so that the top of the SiO2 has the same level as that of the film 3a. The films 3a, 4 are removed to provide the SiO2 as an element separation zone 2. According to this method, the thickness of an oxide film 12 generated on an Si surface does not become nonuniform.
COPYRIGHT: (C)1981,JPO&Japio
JP9712879A 1979-07-30 1979-07-30 Manufacture of semiconductor device Pending JPS5621336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9712879A JPS5621336A (en) 1979-07-30 1979-07-30 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9712879A JPS5621336A (en) 1979-07-30 1979-07-30 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS5621336A true JPS5621336A (en) 1981-02-27

Family

ID=14183918

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9712879A Pending JPS5621336A (en) 1979-07-30 1979-07-30 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS5621336A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57131362U (en) * 1981-02-12 1982-08-16

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57131362U (en) * 1981-02-12 1982-08-16
JPS6234851Y2 (en) * 1981-02-12 1987-09-04

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