JPS5671938A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5671938A JPS5671938A JP14984379A JP14984379A JPS5671938A JP S5671938 A JPS5671938 A JP S5671938A JP 14984379 A JP14984379 A JP 14984379A JP 14984379 A JP14984379 A JP 14984379A JP S5671938 A JPS5671938 A JP S5671938A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- mask
- substrate
- etching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 238000005530 etching Methods 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000003628 erosive effect Effects 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To avoid the erosion of an insulating foundation film using a manufacturing process consisting of stackedly depositing an insulating film and an Al film on a semiconductor substrate and an Si layer thereon at a low temperature and removing the unnecessary portion of the Si layer using a mask and removing through etching the exposed portion of the Al film. CONSTITUTION:An SiO2 film 2 and an Al film 3 are stackedly deposited on an Si substrate 1, and an Si layer 4 thereon at a lower temperature than 300 deg.C to prevent the reaction of Al and Si. A mask 5 consisting of a photoresist or an Al plate is provided at a given place thereon and the layer 4 is plasma-etched using CF4 gas for reducing side etching rate. Thereafter, the mask 5 is removed, the exposed portion of the film 3 is removed through etching using the residual portion of the layer 4 as mask, and the portion under the film 4 of Al is diffused in the substrate 1 through the heat treatment in the nonoxidizing atmosphere at a lower temperature than 500 deg.C. Thus, the damage of the foundation film 2 is avoided when Al is diffused.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14984379A JPS5671938A (en) | 1979-11-19 | 1979-11-19 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14984379A JPS5671938A (en) | 1979-11-19 | 1979-11-19 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5671938A true JPS5671938A (en) | 1981-06-15 |
Family
ID=15483862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14984379A Pending JPS5671938A (en) | 1979-11-19 | 1979-11-19 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5671938A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61268060A (en) * | 1985-05-23 | 1986-11-27 | Toshiba Corp | Semiconductor device |
-
1979
- 1979-11-19 JP JP14984379A patent/JPS5671938A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61268060A (en) * | 1985-05-23 | 1986-11-27 | Toshiba Corp | Semiconductor device |
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