JPS55160446A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55160446A
JPS55160446A JP6761479A JP6761479A JPS55160446A JP S55160446 A JPS55160446 A JP S55160446A JP 6761479 A JP6761479 A JP 6761479A JP 6761479 A JP6761479 A JP 6761479A JP S55160446 A JPS55160446 A JP S55160446A
Authority
JP
Japan
Prior art keywords
layer
sio2
type
si3n4
mask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6761479A
Other languages
Japanese (ja)
Other versions
JPS5751978B2 (en
Inventor
Osamu Hataishi
Yoshinobu Monma
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP6761479A priority Critical patent/JPS55160446A/en
Priority to EP19800301781 priority patent/EP0020144B1/en
Priority to DE8080301781T priority patent/DE3071380D1/en
Priority to US06/155,124 priority patent/US4376664A/en
Publication of JPS55160446A publication Critical patent/JPS55160446A/en
Publication of JPS5751978B2 publication Critical patent/JPS5751978B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Weting (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Bipolar Transistors (AREA)

Abstract

PURPOSE:To obtain a fine isolation layer in the semiconductor device by laminating Si3N4 and SiO2 on an epitaxial layer on the semiconductor substrate, forming a resist mask thereon, implanting impurity thereon, etching the Si3N4 with the SiO2 as a mask to form openings thereat and heat treating it. CONSTITUTION:The Si3N4 24 and SiO2 25 are superimposed on the N type epitaxial layer 23 of the P type Si substrate 22 having an N<+> type buried layer 21. A resist mask is coated thereon, B ion is implanted on an isolating forming portion to form a P<+> type layer 28, P ion is implanted on a collector connecting layer to form an N<+> type layer 30. Then, openings are perforated at the SiO2 25 with HF gas in heated state, and a residual resist 26 is removed. With the SiO2 25 as a mask openings are perforated at the Si3N4. Thereafter, the SiO2 25 is etched, and the Si substrate surface is etched. When it is subsequently heat treated at high temperature, the B in the layer 28 is diffused to form a P<+> type isolation layer, the P in the layer 30 is diffused to form a collector connecting layer, and an oxide thick film 33 is coated thereon. According to this method, it can form an isolation layer having desired fine size.
JP6761479A 1979-05-31 1979-05-31 Manufacture of semiconductor device Granted JPS55160446A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP6761479A JPS55160446A (en) 1979-05-31 1979-05-31 Manufacture of semiconductor device
EP19800301781 EP0020144B1 (en) 1979-05-31 1980-05-29 Method of producing a semiconductor device
DE8080301781T DE3071380D1 (en) 1979-05-31 1980-05-29 Method of producing a semiconductor device
US06/155,124 US4376664A (en) 1979-05-31 1980-05-30 Method of producing a semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6761479A JPS55160446A (en) 1979-05-31 1979-05-31 Manufacture of semiconductor device

Publications (2)

Publication Number Publication Date
JPS55160446A true JPS55160446A (en) 1980-12-13
JPS5751978B2 JPS5751978B2 (en) 1982-11-05

Family

ID=13350004

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6761479A Granted JPS55160446A (en) 1979-05-31 1979-05-31 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55160446A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583246A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Manufacture of semiconductor device
JPS58218137A (en) * 1982-06-11 1983-12-19 Fujitsu Ltd Manufacture of semiconductor device
JPS59121951A (en) * 1982-12-28 1984-07-14 Fujitsu Ltd Semiconductor device and its manufacture

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04135773U (en) * 1991-06-10 1992-12-17 株式会社日本商品開発センター display display card

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS583246A (en) * 1981-06-29 1983-01-10 Fujitsu Ltd Manufacture of semiconductor device
JPH0241169B2 (en) * 1981-06-29 1990-09-14 Fujitsu Ltd
JPS58218137A (en) * 1982-06-11 1983-12-19 Fujitsu Ltd Manufacture of semiconductor device
JPS59121951A (en) * 1982-12-28 1984-07-14 Fujitsu Ltd Semiconductor device and its manufacture

Also Published As

Publication number Publication date
JPS5751978B2 (en) 1982-11-05

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