JPS5637675A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5637675A JPS5637675A JP11379879A JP11379879A JPS5637675A JP S5637675 A JPS5637675 A JP S5637675A JP 11379879 A JP11379879 A JP 11379879A JP 11379879 A JP11379879 A JP 11379879A JP S5637675 A JPS5637675 A JP S5637675A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- boron
- coated
- polycrystalline
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052796 boron Inorganic materials 0.000 abstract 3
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract 2
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- 239000012670 alkaline solution Substances 0.000 abstract 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract 1
- -1 boron ions Chemical class 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000012808 vapor phase Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Abstract
PURPOSE:To obtain a high cut-off frequency in a PNP type transistor while easily facilitating its design by employing a diffusion source obtained by selectively adding boron to a nonaddition polycrystalline Si layer to form an emitter region when forming the transistor. CONSTITUTION:An SiO2 film 2 is coated on a P type Si substrate 1 becoming a collector, an opening is perforated thereat, an N type base region 3 is diffused, no- addition polycrystalline Si layer 4 is grown in vapor phase on the entire surface, and an Si3N4 layer 5 and an SiO2 layer 6 are coated thereon. Then, an opening 7 reaching the layer 4 is perforated at these layers, the layer 4 is partly exposed, with the layer 6 as a mask boron ions are implanted, and the layer 4 is partly altered into a boron-added polycrystalline Si layer 8. Thereafter, the layer 5 formed therearound is sidewisely etched with a hot phosphoric acid, and a constricted region 9 is formed, the layer 4 of fast etching speed exposed here is removed with alkaline solution, a vacity 10 is thus formed, and the layer 8 is independently formed. Subsequently, the layers 6 and 5 are removed, the layer 8 is coated with an SiO2 layer 11, is heat treated, and boron in the layer 8 is diffused in a P type emitter region 12.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11379879A JPS5637675A (en) | 1979-09-05 | 1979-09-05 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11379879A JPS5637675A (en) | 1979-09-05 | 1979-09-05 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5637675A true JPS5637675A (en) | 1981-04-11 |
Family
ID=14621339
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11379879A Pending JPS5637675A (en) | 1979-09-05 | 1979-09-05 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5637675A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60235461A (en) * | 1984-05-08 | 1985-11-22 | Nec Corp | Manufacture of semiconductor device |
| JPS60241687A (en) * | 1984-05-15 | 1985-11-30 | 西谷 光夫 | Method of connecting copper wire to connecting terminal and its connecting terminal |
-
1979
- 1979-09-05 JP JP11379879A patent/JPS5637675A/en active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60235461A (en) * | 1984-05-08 | 1985-11-22 | Nec Corp | Manufacture of semiconductor device |
| JPS60241687A (en) * | 1984-05-15 | 1985-11-30 | 西谷 光夫 | Method of connecting copper wire to connecting terminal and its connecting terminal |
| JPH0471316B2 (en) * | 1984-05-15 | 1992-11-13 | Mitsuo Nishitani |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS5467778A (en) | Production of semiconductor device | |
| JPS54100273A (en) | Memory circuit and variable resistance element | |
| JPS5613719A (en) | Manufacture of semiconductor device | |
| JPS5637675A (en) | Manufacture of semiconductor device | |
| JPS5642367A (en) | Manufacture of bipolar integrated circuit | |
| JPS55160446A (en) | Manufacture of semiconductor device | |
| JPS5541704A (en) | Production of semiconductor device | |
| JPS5727060A (en) | Manufacture of semiconductor device | |
| JPS5548950A (en) | Manufacturing of semiconductor device | |
| JPS57128063A (en) | Semiconductor device and manufacture thereof | |
| JPS5731172A (en) | Manufacture of semiconductor device | |
| JPS54151379A (en) | Manufactue for semiconductor device | |
| JPS5469079A (en) | Manufacture of semiconductor device | |
| JPS55153344A (en) | Manufacture of semiconductor device | |
| JPS5310979A (en) | Semiconductor device and its production | |
| JPS55123143A (en) | Manufacture of semiconductor device | |
| JPS57176764A (en) | Manufacture of semiconductor device | |
| JPS54132177A (en) | Semiconductor device and its manufacture | |
| JPS564285A (en) | Manufacture of planar type semiconductor device | |
| JPS55130162A (en) | Method of fabricating semiconductor device | |
| JPS5550671A (en) | Manufacturing of variable capacitance element | |
| JPS55128868A (en) | Method of fabricating semiconductor device | |
| JPS5578571A (en) | Manufacture of semiconductor device | |
| JPS5660015A (en) | Manufacture of semiconductor device | |
| JPS54138368A (en) | Manufacture for semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A621 | Written request for application examination |
Effective date: 20041104 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
| A977 | Report on retrieval |
Effective date: 20060906 Free format text: JAPANESE INTERMEDIATE CODE: A971007 |
|
| A131 | Notification of reasons for refusal |
Effective date: 20070109 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
| A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20070330 |
|
| A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20070521 |
|
| A521 | Written amendment |
Effective date: 20070709 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070904 |