JPS55128868A - Method of fabricating semiconductor device - Google Patents
Method of fabricating semiconductor deviceInfo
- Publication number
- JPS55128868A JPS55128868A JP3677279A JP3677279A JPS55128868A JP S55128868 A JPS55128868 A JP S55128868A JP 3677279 A JP3677279 A JP 3677279A JP 3677279 A JP3677279 A JP 3677279A JP S55128868 A JPS55128868 A JP S55128868A
- Authority
- JP
- Japan
- Prior art keywords
- sio
- film
- emitter
- coated
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE: To prevent the short between an emitter and a base of a semiconductor device by forming emitter diffusing opening having desired size and area initially and sidewisely etching to expand the base area subsequently.
CONSTITUTION: A SiO2 41 and Si3N4 42 are laminated on a substrate 40 formed with an n--type epitaxial layer in an n-type silicon, and a SiO2 film is coated thereon for next photoetching process. A photoresist is coated thereon, exposed to the developed, the SiO2 and Si3N4 are selectively etched with fluoric acid and phosphoric acid to form diffused opening 43, As is implanted to form an emitter layer E. Then, the substrate is laterally etched with fluoric acid. Thereafter, the film 43 is removed by the phosphoric acid, and B is thermally diffused therein. Then, the B overrides the As to form a based layer B and a SiO2 film 44. Openings are selectively perforated at the film 44 to form electrodes 45, 46. According to this process, it is very effective for the fabrication of a high frequency high power transistor having a problem at the emitter peripheral length.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3677279A JPS55128868A (en) | 1979-03-28 | 1979-03-28 | Method of fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3677279A JPS55128868A (en) | 1979-03-28 | 1979-03-28 | Method of fabricating semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS55128868A true JPS55128868A (en) | 1980-10-06 |
Family
ID=12479048
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3677279A Pending JPS55128868A (en) | 1979-03-28 | 1979-03-28 | Method of fabricating semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55128868A (en) |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51102472A (en) * | 1971-03-17 | 1976-09-09 | Philips Nv | |
JPS5223263A (en) * | 1975-08-18 | 1977-02-22 | Nec Corp | Method of manufacturing semiconductor device |
-
1979
- 1979-03-28 JP JP3677279A patent/JPS55128868A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51102472A (en) * | 1971-03-17 | 1976-09-09 | Philips Nv | |
JPS5223263A (en) * | 1975-08-18 | 1977-02-22 | Nec Corp | Method of manufacturing semiconductor device |
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