JPS5446468A - Manufacture of inverted-trapezoid structure - Google Patents

Manufacture of inverted-trapezoid structure

Info

Publication number
JPS5446468A
JPS5446468A JP11310877A JP11310877A JPS5446468A JP S5446468 A JPS5446468 A JP S5446468A JP 11310877 A JP11310877 A JP 11310877A JP 11310877 A JP11310877 A JP 11310877A JP S5446468 A JPS5446468 A JP S5446468A
Authority
JP
Japan
Prior art keywords
region
film
type
electrode
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP11310877A
Other languages
Japanese (ja)
Other versions
JPS5532226B2 (en
Inventor
Shoichi Fujisada
Masaru Asano
Tetsushi Sakai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Nippon Telegraph and Telephone Corp
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP11310877A priority Critical patent/JPS5446468A/en
Publication of JPS5446468A publication Critical patent/JPS5446468A/en
Publication of JPS5532226B2 publication Critical patent/JPS5532226B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

PURPOSE: To obtain a low-noise and excellent high-frequency ftransistor, by forming a protruding electrode region for providing an emitter electrode onto a semiconductor substrate and by etching this region into an inverted-trapezoid shape with the reverse area smaller than the top area.
CONSTITUTION: On N-type Si substrate 11, P-type base region 12 is diffusion- formed, and a polycrystal layer cntaining N-type impurities grown on it is photo- etched to form emitter electrode region 13 of a Si layer. Next, photo resist film 14 is applied in order to bury it, the coating is left only between regions 13 through exposure development, and film 15 of Ti or SiO2 is adhered to the intire surface. Then, film 15 between films 13 is removed together with film 14 under it, and the film 15 remaining on region 13 is used as a mask for etching, thereby making narrow the width of the part under the flank of elecrrode region 13. Next, film 15 is removed, and N-type impurities are diffused through a heat treatment to form N-type emitter region 16; and electrode 17 is fixed and then, base electrode 17' is formed on region 12 between regions 16
COPYRIGHT: (C)1979,JPO&Japio
JP11310877A 1977-09-19 1977-09-19 Manufacture of inverted-trapezoid structure Granted JPS5446468A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11310877A JPS5446468A (en) 1977-09-19 1977-09-19 Manufacture of inverted-trapezoid structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11310877A JPS5446468A (en) 1977-09-19 1977-09-19 Manufacture of inverted-trapezoid structure

Publications (2)

Publication Number Publication Date
JPS5446468A true JPS5446468A (en) 1979-04-12
JPS5532226B2 JPS5532226B2 (en) 1980-08-23

Family

ID=14603691

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11310877A Granted JPS5446468A (en) 1977-09-19 1977-09-19 Manufacture of inverted-trapezoid structure

Country Status (1)

Country Link
JP (1) JPS5446468A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11298046A (en) * 1998-03-18 1999-10-29 Trw Inc Manufacture of semiconductor optical microlens

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193674A (en) * 1975-02-14 1976-08-17

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5193674A (en) * 1975-02-14 1976-08-17

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11298046A (en) * 1998-03-18 1999-10-29 Trw Inc Manufacture of semiconductor optical microlens

Also Published As

Publication number Publication date
JPS5532226B2 (en) 1980-08-23

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