JPS54144888A - Manufacture for gate control semiconductor element - Google Patents
Manufacture for gate control semiconductor elementInfo
- Publication number
- JPS54144888A JPS54144888A JP5358278A JP5358278A JPS54144888A JP S54144888 A JPS54144888 A JP S54144888A JP 5358278 A JP5358278 A JP 5358278A JP 5358278 A JP5358278 A JP 5358278A JP S54144888 A JPS54144888 A JP S54144888A
- Authority
- JP
- Japan
- Prior art keywords
- diffusion
- implanted region
- type
- entire surface
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Thyristors (AREA)
Abstract
PURPOSE: To simplify the process, by first forming the implanted region on the entire surface with diffusion, etching it into the specified pattern, and growing the epitaxial layer on the entire surface, in forming the implanted region on the semiconductor substrate on which PN junction is provided.
CONSTITUTION: The P type layers 20a and 20b are formed by diffusion at the both sides of the N type Si substrate 1, and all the surface is covered with the SiO2 folms 3a and 3b respectively. Next, one film 3a is selectively photo-etched to section it into a plurality of films 3a, and implantation is made by using mixture of nitric acid, acetic acid and hydrofluoric acid less in the mixture ratio of hydrofluoric acid, mesa etching is made form the implanted region consisting of the layer 20a under the film 3a. After that, the P- type layer 50 is epitaxially grown on the entire surface, the surface is made smoothed with polishing, and the N type emitter diffusion and the Au diffusion for life time extension are made normally. Thus, the formation of the implanted region can be very simpler.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5358278A JPS54144888A (en) | 1978-05-04 | 1978-05-04 | Manufacture for gate control semiconductor element |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5358278A JPS54144888A (en) | 1978-05-04 | 1978-05-04 | Manufacture for gate control semiconductor element |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS54144888A true JPS54144888A (en) | 1979-11-12 |
Family
ID=12946828
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP5358278A Pending JPS54144888A (en) | 1978-05-04 | 1978-05-04 | Manufacture for gate control semiconductor element |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS54144888A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63224360A (en) * | 1987-03-13 | 1988-09-19 | Meidensha Electric Mfg Co Ltd | Manufacture of buried gate structure gate turn-off thyristor |
-
1978
- 1978-05-04 JP JP5358278A patent/JPS54144888A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63224360A (en) * | 1987-03-13 | 1988-09-19 | Meidensha Electric Mfg Co Ltd | Manufacture of buried gate structure gate turn-off thyristor |
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