JPS54152478A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS54152478A
JPS54152478A JP6149378A JP6149378A JPS54152478A JP S54152478 A JPS54152478 A JP S54152478A JP 6149378 A JP6149378 A JP 6149378A JP 6149378 A JP6149378 A JP 6149378A JP S54152478 A JPS54152478 A JP S54152478A
Authority
JP
Japan
Prior art keywords
layer
sio
super
layers
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP6149378A
Other languages
Japanese (ja)
Inventor
Gunji Mihashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP6149378A priority Critical patent/JPS54152478A/en
Publication of JPS54152478A publication Critical patent/JPS54152478A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To realize free and well-reproducible control of the impurity distribution of cathode region of a super-stair-case junction part which can not be performed by a conventional method, by repeating epitaxial growth and selective diffusion.
CONSTITUTION: On N+-type Si substrate 11, N epitaxial layer 12 is stacked and SiO2 film 13 is provided with an opening, where N+ layer 14 is formed. It is recommended to use, especially, Sb and As small in diffusion coefficient. After film 13 is removed, epitaxial layer 17 is formed by vapor-phase growth and SiO2 mask 13' is used to form N-type diffusion layer 18 right over layer 14. Under various conditions, layers 14 and 18 can be made N+ layers of complex distribution by combining various impurities. Further, an element with super-staircase junction can be formed by forming P+ layer 15 in the same region. Consequently, mass-production can be realized with good reproducibility and uniformity of various characteristics of a varactor diode.
COPYRIGHT: (C)1979,JPO&Japio
JP6149378A 1978-05-22 1978-05-22 Manufacture of semiconductor device Pending JPS54152478A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6149378A JPS54152478A (en) 1978-05-22 1978-05-22 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6149378A JPS54152478A (en) 1978-05-22 1978-05-22 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS54152478A true JPS54152478A (en) 1979-11-30

Family

ID=13172666

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6149378A Pending JPS54152478A (en) 1978-05-22 1978-05-22 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS54152478A (en)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826195A (en) * 1971-08-07 1973-04-05

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826195A (en) * 1971-08-07 1973-04-05

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