JPS57115822A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57115822A
JPS57115822A JP169481A JP169481A JPS57115822A JP S57115822 A JPS57115822 A JP S57115822A JP 169481 A JP169481 A JP 169481A JP 169481 A JP169481 A JP 169481A JP S57115822 A JPS57115822 A JP S57115822A
Authority
JP
Japan
Prior art keywords
region
type
substrate
epitaxial layer
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP169481A
Other languages
Japanese (ja)
Inventor
Junichi Hattori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP169481A priority Critical patent/JPS57115822A/en
Publication of JPS57115822A publication Critical patent/JPS57115822A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To enable the growth of a thin epitaxial layer for the subject semiconductor device by a method wherein an epitaxial layer is grown on a semiconductor crystal substrate, having a buried layer of high density impurities, after the substrate has been baked at a high temperature in hydrogen. CONSTITUTION:An N<+> type diffused buried layer 2 is formed on the prescribed region of a P type Si substrate 1. Then, the substrate 1 is baked at a high temperature in hydrogen. As a result, the density on the surface of region 2 is reduced, and an N type diffused buried layer 2 is formed. An N type epitaxial layer 3 is then formed on the entire surface of the substrate 1. At this time, an N type region 4, having a higher impurity density than the layer 3 and moved up a little from the region 2', is formed. Besides, a P type insulation spilt diffusion region 5, a P type base diffusion region 7, and an N type emitter diffusion region 8 are formed. Accordingly, as autodoping can be suppressed, and a high breakdown voltage between region 7 and region 2 can be maintained, thereby enabling the formation of a thin epitaxial layer.
JP169481A 1981-01-08 1981-01-08 Manufacture of semiconductor device Pending JPS57115822A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP169481A JPS57115822A (en) 1981-01-08 1981-01-08 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP169481A JPS57115822A (en) 1981-01-08 1981-01-08 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57115822A true JPS57115822A (en) 1982-07-19

Family

ID=11508631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP169481A Pending JPS57115822A (en) 1981-01-08 1981-01-08 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57115822A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927521A (en) * 1982-08-06 1984-02-14 Hitachi Ltd Fabrication of semiconductor substrate
FR2766845A1 (en) * 1997-07-31 1999-02-05 Sgs Thomson Microelectronics EPITAXY PROCESS ON A SILICON SUBSTRATE COMPRISING AREAS HIGHLY DOPED WITH ARSENIC
WO2001035452A1 (en) * 1999-11-10 2001-05-17 Shin-Etsu Handotai Co., Ltd. Production method for silicon epitaxial wafer and silicon epitaxial wafer

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5927521A (en) * 1982-08-06 1984-02-14 Hitachi Ltd Fabrication of semiconductor substrate
JPH0361335B2 (en) * 1982-08-06 1991-09-19 Hitachi Ltd
FR2766845A1 (en) * 1997-07-31 1999-02-05 Sgs Thomson Microelectronics EPITAXY PROCESS ON A SILICON SUBSTRATE COMPRISING AREAS HIGHLY DOPED WITH ARSENIC
EP0897024A1 (en) * 1997-07-31 1999-02-17 STMicroelectronics SA Process for epitaxy on a silicon substrate containing zones highly doped with arsenic
US6162706A (en) * 1997-07-31 2000-12-19 Stmicroelectronics S.A. Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic
US6776842B2 (en) 1997-07-31 2004-08-17 Stmicroelectronics S.A. Method of epitaxy on a silicon substrate comprising areas heavily doped with arsenic
WO2001035452A1 (en) * 1999-11-10 2001-05-17 Shin-Etsu Handotai Co., Ltd. Production method for silicon epitaxial wafer and silicon epitaxial wafer
US6589336B1 (en) 1999-11-10 2003-07-08 Shin-Etsu Handotai Co., Ltd. Production method for silicon epitaxial wafer and silicon epitaxial wafer

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