JPS5721814A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5721814A JPS5721814A JP9670180A JP9670180A JPS5721814A JP S5721814 A JPS5721814 A JP S5721814A JP 9670180 A JP9670180 A JP 9670180A JP 9670180 A JP9670180 A JP 9670180A JP S5721814 A JPS5721814 A JP S5721814A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- single crystal
- film
- epitaxially grown
- type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Recrystallisation Techniques (AREA)
Abstract
PURPOSE: To prevent the automatic doping in a growing step by forming a polycrystalline semiconductor layer on the surface of a single crystal semiconductor substrate formed with a high density impurity region, annealing it to form a single crystal region, and then forming an epitaxially grown layer.
CONSTITUTION: A polycrystalline silicon film 7 having 0.1μm of thickness if formed on the surface of a P-type silicon substrate 5 formed with a doped layer 6 in high density N-type impurity. The film 7 is formed, for example, at 650°C, 0.2W0.3 Torr by a reduced pressure CVD method. After the film 7 is converted to single crystal silicon layer 8 by a laser annealing method, and N-type single crystal silicon 9 having 2μm of thickness is epitaxially grown. Since the layer 6 is not exposed at the epitaxially growint time in this manner, it can prevent the automatic doping to the epitaxially grown layer.
COPYRIGHT: (C)1982,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9670180A JPS5721814A (en) | 1980-07-15 | 1980-07-15 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9670180A JPS5721814A (en) | 1980-07-15 | 1980-07-15 | Manufacture of semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5721814A true JPS5721814A (en) | 1982-02-04 |
Family
ID=14172058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9670180A Pending JPS5721814A (en) | 1980-07-15 | 1980-07-15 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5721814A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5112773A (en) * | 1991-04-10 | 1992-05-12 | Micron Technology, Inc. | Methods for texturizing polysilicon utilizing gas phase nucleation |
-
1980
- 1980-07-15 JP JP9670180A patent/JPS5721814A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5112773A (en) * | 1991-04-10 | 1992-05-12 | Micron Technology, Inc. | Methods for texturizing polysilicon utilizing gas phase nucleation |
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