JPS6410620A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6410620A
JPS6410620A JP16631687A JP16631687A JPS6410620A JP S6410620 A JPS6410620 A JP S6410620A JP 16631687 A JP16631687 A JP 16631687A JP 16631687 A JP16631687 A JP 16631687A JP S6410620 A JPS6410620 A JP S6410620A
Authority
JP
Japan
Prior art keywords
silicon
amorphous silicon
oxide film
grown
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16631687A
Other languages
Japanese (ja)
Other versions
JPH0666275B2 (en
Inventor
Koji Kanba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62166316A priority Critical patent/JPH0666275B2/en
Publication of JPS6410620A publication Critical patent/JPS6410620A/en
Publication of JPH0666275B2 publication Critical patent/JPH0666275B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

PURPOSE:To realize a correct operation without causing a leakage when a bipolar transistor is formed while the growth of a grain from the surface of amorphous silicon is suppressed by arranging the amorphous silicon between oxide films. CONSTITUTION:A first oxide film 1b is formed on the surface of a silicon substrate 4. Then, amorphous silicon 3 is grown on the first oxide film 1b at a substrate temperature of, e.g., 550 deg.C by using an ordinary low-pressure CVD method. Then, a second oxide film 1a is formed. These three layers are etched in succession from an uppermost layer downward, and a hole is made. Immediately after this process, single crystal silicon 5 is epitaxially grown selectively on the surface of the silicon substrate. During this epitaxial growth process a grain is hard to produce on the surface of the amorphous silicon 3. As a result, a region of polycrystalline silicon is hardly formed at the single crystal silicon 5 to be grown on the surface of the silicon substrate 4.
JP62166316A 1987-07-02 1987-07-02 Method for manufacturing semiconductor device Expired - Fee Related JPH0666275B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62166316A JPH0666275B2 (en) 1987-07-02 1987-07-02 Method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62166316A JPH0666275B2 (en) 1987-07-02 1987-07-02 Method for manufacturing semiconductor device

Publications (2)

Publication Number Publication Date
JPS6410620A true JPS6410620A (en) 1989-01-13
JPH0666275B2 JPH0666275B2 (en) 1994-08-24

Family

ID=15829090

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62166316A Expired - Fee Related JPH0666275B2 (en) 1987-07-02 1987-07-02 Method for manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPH0666275B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8741333B2 (en) 2004-06-07 2014-06-03 Nuvo Research Inc. Compositions and methods for treating dermatitis or psoriasis
US8741332B2 (en) 2004-06-07 2014-06-03 Nuvo Research Inc. Compositions and methods for dermally treating neuropathic pain

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220418A (en) * 1985-03-27 1986-09-30 Fujitsu Ltd Manufacture of semiconductor device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61220418A (en) * 1985-03-27 1986-09-30 Fujitsu Ltd Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8741333B2 (en) 2004-06-07 2014-06-03 Nuvo Research Inc. Compositions and methods for treating dermatitis or psoriasis
US8741332B2 (en) 2004-06-07 2014-06-03 Nuvo Research Inc. Compositions and methods for dermally treating neuropathic pain

Also Published As

Publication number Publication date
JPH0666275B2 (en) 1994-08-24

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees