JPH0563187A - Semiconductor device - Google Patents

Abstract

PURPOSE:To obtain an insulating film having a small interface state density by forming a diamond film at least on a gate electrode of a field effect transistor. CONSTITUTION:A gate insulating film 2 and a field insulating film 3 formed of diamond films and a source region 4 and a drain region 6 formed of impurity diffused layers are formed on the surface of a semiconductor substrate 1. Further, a gate electrode 5 is formed on the film 2 to constitute a field effect transistor. Thus, the mismatch of crystals between the substrate having a diamond crystalline structure and the insulating film having the diamond crystalline structure is eliminated, and a interface level density can be reduced.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an insulating film material for field effect transistors.

[0002]

2. Description of the Related Art Conventionally, it has been customary that a silicon oxide film is mainly used as an insulating film material of a field effect transistor.

[0003]

However, according to the above conventional technique, since the insulating film is in an amorphous state, the crystallographic compatibility with the underlying semiconductor single crystal substrate is not good, and the interface state density is large. There was a problem called.

An object of the present invention is to solve the problems of the prior art and to provide an insulating film having a low interface state density.

[0005]

In order to solve the above problems and achieve the above objects, the present invention relates to a semiconductor device,
Means are taken to form a diamond film on at least the gate region of the field effect transistor.

[0006]

EXAMPLES The present invention will be described in detail below with reference to examples.

FIG. 1 is a sectional view of a field effect transistor showing an embodiment of the present invention. That is, silicon,
A gate insulating film 2 and a field insulating film 3 made of a diamond film are formed on the surface of a semiconductor substrate 1 made of a compound semiconductor, an oxide semiconductor or a semiconductor diamond.
Then, a source region 4 and a drain region 6 made of an impurity diffusion layer are formed, and a gate electrode 5 is formed on the gate insulating film 2 to form a field effect transistor.

The diamond films of the gate insulating film 2 and the field insulating film 3 are intrinsic insulating diamond films, and the semiconductor diamond used for the semiconductor substrate 1 is a diamond containing a dopant.

Further, the diamond film can be formed by a plasma CVD method using a hydrocarbon gas, and ion etching or the like is used for photo-etching the diamond film.

The present invention is an MIS type F as an example.
Not only ET but also junction type FET can be used.

[0011]

According to the present invention, the crystal mismatch between the semiconductor substrate having the diamond crystal structure and the insulating film having the diamond crystal structure is eliminated, and the interface state density can be reduced.

[Brief description of drawings]

FIG. 1 is a sectional view of a semiconductor device showing an embodiment of the present invention.

[Explanation of symbols]

 1 ... Semiconductor substrate 2 ... Gate insulating film 3 ... Field insulating film 4 ... Source region 5 ... Gate electrode 6 ... Drain region

Continuation of the front page (51) Int.Cl. ⁵ Identification number Office reference number FI technical display location H01L 29/812 7739-4M H01L 29/80 F

Claims (1)

[Claims] 1. A semiconductor device comprising at least a gate region of a field effect transistor formed of a diamond film.