JPS6410618A - Method of growing semiconductor crystal - Google Patents
Method of growing semiconductor crystalInfo
- Publication number
- JPS6410618A JPS6410618A JP16544387A JP16544387A JPS6410618A JP S6410618 A JPS6410618 A JP S6410618A JP 16544387 A JP16544387 A JP 16544387A JP 16544387 A JP16544387 A JP 16544387A JP S6410618 A JPS6410618 A JP S6410618A
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- thin film
- growth operation
- adjusted
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Abstract
PURPOSE:To obtain a high-quality crystal and to enhance the performance of a compound semiconductor device on an Si substrate by a method wherein a growth operation is interrupted during a growth process of a semiconductor thin film and, after a temperature has been adjusted, the crystal growth operation is executed again to form the thin film. CONSTITUTION:In a method to form a III-V compound semiconductor thin film on an Si substrate, a growth operation is interrupted when a film thickness is less than a required value during a growth process of the semiconductor thin film. After a temperature has been adjusted, the crystal growth operation is executed again and the thin film with the required film thickness is formed. When the temperature is adjusted during an interruption of the growth operation, a high-temperature history of at least more than 850 deg.C is added. In addition, when the temperature is adjusted during the interruption of the growth operation, temperature values at arbitrary two points between a room temperature and 1000 deg.C are selected; the temperature is raised and lowered at least more than once within a temperature range between the two points.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16544387A JPS6410618A (en) | 1987-07-03 | 1987-07-03 | Method of growing semiconductor crystal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16544387A JPS6410618A (en) | 1987-07-03 | 1987-07-03 | Method of growing semiconductor crystal |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6410618A true JPS6410618A (en) | 1989-01-13 |
Family
ID=15812531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16544387A Pending JPS6410618A (en) | 1987-07-03 | 1987-07-03 | Method of growing semiconductor crystal |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6410618A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5019529A (en) * | 1988-05-17 | 1991-05-28 | Fujitsu Limited | Heteroepitaxial growth method |
-
1987
- 1987-07-03 JP JP16544387A patent/JPS6410618A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5019529A (en) * | 1988-05-17 | 1991-05-28 | Fujitsu Limited | Heteroepitaxial growth method |
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