JPS6410618A - Method of growing semiconductor crystal - Google Patents

Method of growing semiconductor crystal

Info

Publication number
JPS6410618A
JPS6410618A JP16544387A JP16544387A JPS6410618A JP S6410618 A JPS6410618 A JP S6410618A JP 16544387 A JP16544387 A JP 16544387A JP 16544387 A JP16544387 A JP 16544387A JP S6410618 A JPS6410618 A JP S6410618A
Authority
JP
Japan
Prior art keywords
temperature
thin film
growth operation
adjusted
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16544387A
Other languages
Japanese (ja)
Inventor
Hiroshi Okamoto
Yoshiaki Kadota
Yoshio Watanabe
Tokuro Omachi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP16544387A priority Critical patent/JPS6410618A/en
Publication of JPS6410618A publication Critical patent/JPS6410618A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To obtain a high-quality crystal and to enhance the performance of a compound semiconductor device on an Si substrate by a method wherein a growth operation is interrupted during a growth process of a semiconductor thin film and, after a temperature has been adjusted, the crystal growth operation is executed again to form the thin film. CONSTITUTION:In a method to form a III-V compound semiconductor thin film on an Si substrate, a growth operation is interrupted when a film thickness is less than a required value during a growth process of the semiconductor thin film. After a temperature has been adjusted, the crystal growth operation is executed again and the thin film with the required film thickness is formed. When the temperature is adjusted during an interruption of the growth operation, a high-temperature history of at least more than 850 deg.C is added. In addition, when the temperature is adjusted during the interruption of the growth operation, temperature values at arbitrary two points between a room temperature and 1000 deg.C are selected; the temperature is raised and lowered at least more than once within a temperature range between the two points.
JP16544387A 1987-07-03 1987-07-03 Method of growing semiconductor crystal Pending JPS6410618A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16544387A JPS6410618A (en) 1987-07-03 1987-07-03 Method of growing semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16544387A JPS6410618A (en) 1987-07-03 1987-07-03 Method of growing semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS6410618A true JPS6410618A (en) 1989-01-13

Family

ID=15812531

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16544387A Pending JPS6410618A (en) 1987-07-03 1987-07-03 Method of growing semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS6410618A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019529A (en) * 1988-05-17 1991-05-28 Fujitsu Limited Heteroepitaxial growth method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5019529A (en) * 1988-05-17 1991-05-28 Fujitsu Limited Heteroepitaxial growth method

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