JPS5659700A - Forming method for gallium nitride single crystal thin film - Google Patents
Forming method for gallium nitride single crystal thin filmInfo
- Publication number
- JPS5659700A JPS5659700A JP13459279A JP13459279A JPS5659700A JP S5659700 A JPS5659700 A JP S5659700A JP 13459279 A JP13459279 A JP 13459279A JP 13459279 A JP13459279 A JP 13459279A JP S5659700 A JPS5659700 A JP S5659700A
- Authority
- JP
- Japan
- Prior art keywords
- gan
- thin film
- substrate
- growth
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To obtain a GaN thin film with high crystallizability suitable for use as a substrate by carrying out the vapor phase growth of GaN on an insulating substrate while adding an impurity atom such as Zn or Cd to the atmosphere at the time of starting the growth and peeling the resulting GaN from the substrate.
CONSTITUTION: In the vapor phase growth of GaN on an insulating substrate of α-Al2O3 or the like the growth is carried out while adding at least one of impurity atoms such as Zn, Cd, As, P, S, Se and Te to the atmosphere at the time of starting the growth to weaken the bonding of GaN to the substrate. Epitaxially grown GaN is then peeled from the substrate to obtain a GaN thin film having a smooth surface and high crystallizability. This thin film is suitable for use as the 2nd substrate in a process of further epitaxially growing GaN.
COPYRIGHT: (C)1981,JPO&Japio
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13459279A JPS5659700A (en) | 1979-10-17 | 1979-10-17 | Forming method for gallium nitride single crystal thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13459279A JPS5659700A (en) | 1979-10-17 | 1979-10-17 | Forming method for gallium nitride single crystal thin film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5659700A true JPS5659700A (en) | 1981-05-23 |
| JPS612635B2 JPS612635B2 (en) | 1986-01-27 |
Family
ID=15131980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13459279A Granted JPS5659700A (en) | 1979-10-17 | 1979-10-17 | Forming method for gallium nitride single crystal thin film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5659700A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6765240B2 (en) | 1994-01-27 | 2004-07-20 | Cree, Inc. | Bulk single crystal gallium nitride and method of making same |
| US6958093B2 (en) | 1994-01-27 | 2005-10-25 | Cree, Inc. | Free-standing (Al, Ga, In)N and parting method for forming same |
| JP2009161436A (en) * | 2009-02-26 | 2009-07-23 | Sumitomo Electric Ind Ltd | Group iii nitride semiconductor crystal substrate, group iii nitride semiconductor device, and its manufacture method |
-
1979
- 1979-10-17 JP JP13459279A patent/JPS5659700A/en active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6765240B2 (en) | 1994-01-27 | 2004-07-20 | Cree, Inc. | Bulk single crystal gallium nitride and method of making same |
| US6958093B2 (en) | 1994-01-27 | 2005-10-25 | Cree, Inc. | Free-standing (Al, Ga, In)N and parting method for forming same |
| US6972051B2 (en) | 1994-01-27 | 2005-12-06 | Cree, Inc. | Bulk single crystal gallium nitride and method of making same |
| JP2009161436A (en) * | 2009-02-26 | 2009-07-23 | Sumitomo Electric Ind Ltd | Group iii nitride semiconductor crystal substrate, group iii nitride semiconductor device, and its manufacture method |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS612635B2 (en) | 1986-01-27 |
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